Metal-gate resistance with skin effect consideration in nanoscale MOSFETs for millimeter-wave ICs

Sang Lam, Mansun Chan

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review


Copper metal gate has been introduced in logic CMOS processes starting from the 45-nm technology node. With the skin depth of about 270 nm at 60 GHz for copper, the DC end-to-end resistance of the copper gate electrode is found to be Rdc ≈ 9 ω for a 45-nm MOSFET with W/L = 30 and it is a good estimation of the actual effective resistance Rac with less than 1% error. Rac of copper-gate electrode with rectangular cross-sectional designs is investigated with skin effect consideration. Design guidelines are suggested for device optimization of nanoscale metal-gate MOSFETs for millimeter-wave integrated circuits.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
Publication statusPublished - 26 Apr 2016
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 28 Jul 201431 Jul 2014

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014


ConferenceIEEE International Nanoelectronics Conference, INEC 2014


  • gate resistance
  • metal-gate MOSFET
  • millimeter-wave integrated circuits
  • nanoscale CMOS
  • skin effect

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