@inproceedings{ef6ee4c598d84da0acb986e2e3957ca7,
title = "Metal-gate resistance with skin effect consideration in nanoscale MOSFETs for millimeter-wave ICs",
abstract = "Copper metal gate has been introduced in logic CMOS processes starting from the 45-nm technology node. With the skin depth of about 270 nm at 60 GHz for copper, the DC end-to-end resistance of the copper gate electrode is found to be Rdc ≈ 9 ω for a 45-nm MOSFET with W/L = 30 and it is a good estimation of the actual effective resistance Rac with less than 1% error. Rac of copper-gate electrode with rectangular cross-sectional designs is investigated with skin effect consideration. Design guidelines are suggested for device optimization of nanoscale metal-gate MOSFETs for millimeter-wave integrated circuits.",
keywords = "gate resistance, metal-gate MOSFET, millimeter-wave integrated circuits, nanoscale CMOS, skin effect",
author = "Sang Lam and Mansun Chan",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",
year = "2016",
month = apr,
day = "26",
doi = "10.1109/INEC.2014.7460421",
language = "English",
series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",
}