TY - JOUR
T1 - Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes
AU - Subramanian, Alagesan
AU - Pan, Zhenghui
AU - Zhang, Zhenbo
AU - Ahmad, Imtiaz
AU - Chen, Jing
AU - Liu, Meinan
AU - Cheng, Shuang
AU - Xu, Yijun
AU - Wu, Jun
AU - Lei, Wei
AU - Khan, Qasim
AU - Zhang, Yuegang
N1 - Funding Information:
The financial support provided by Chinese Academy of Sciences President’s International Fellowship for Postdoctoral Researchers (2016PM018), the National Natural Science Foundation of China (61504026 and 21433013), the National Key Research and Development Program of China (2016YFB0100100), and the CAS−DOE Joint Research Program (121E32KYSB20150004 and 121E32KYSB20160032) is gratefully acknowledged.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/4/18
Y1 - 2018/4/18
N2 - All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium-doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency of 2210 cd m-2, and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO2 compared to that for undoped TiO2-based devices.
AB - All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium-doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency of 2210 cd m-2, and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO2 compared to that for undoped TiO2-based devices.
KW - charge carrier balance
KW - CsPbBr quantum dots
KW - Fermi-level tuning
KW - inverted light-emitting diodes
KW - lithium doping
KW - TiO nanoparticles
UR - http://www.scopus.com/inward/record.url?scp=85045671202&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b01684
DO - 10.1021/acsami.8b01684
M3 - Article
C2 - 29601175
AN - SCOPUS:85045671202
SN - 1944-8244
VL - 10
SP - 13236
EP - 13243
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 15
ER -