Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga₂O₃ Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition

Material Science

• Surface Morphology 100%
• Devices 50%
• Electrical Property 50%
• Metal Oxide 50%
• Oxide Semiconductor 50%
• Film Thickness 50%
• X-Ray Photoelectron Spectroscopy 50%
• Capacitor 50%
• Chemical State 50%
• Current-Voltage Characteristic 50%
• Optoelectronics 50%
• Reflectivity 50%
• Microstructure 50%
• Surface Roughness 50%