High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng, Huarui Sun, Xuelin Yang^*, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, Bo Shen^*

^*Corresponding author for this work