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GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function
Ibrahim Mustafa Mehedi, Abdulaziz M. Alshareef, Md Rafiqul Islam, Md Tanvir Hasan*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
10
Citations
(Scopus)