First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

Sachin Yadav, Kian Hua Tan, Annie, Kian Hui Goh, Sujith Subramanian, Kain Lu Low, Nanyan Chen, Bowen Jia, Soon Fatt Yoon, Gengchiau Liang, Xiao Gong, Yee Chia Yeo

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

12 Citations (Scopus)

Fingerprint

Dive into the research topics of 'First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules'. Together they form a unique fingerprint.

Material Science

Engineering