Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode

Qinglei Bu; Yutao Cai; Miao Cui; Huiqing Wen; Wen Liu

doi:10.1109/ICICDT.2019.8790836

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode

Qinglei Bu, Yutao Cai, Miao Cui, Huiqing Wen, Wen Liu

Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (LAC). The electrical characteristics of these devices are illustrated, the turn-on voltage (VT) and breakdown voltage (BV) are compared under the related LAC. The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790836
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

Breakdown voltage
lateral AlGaN/GaN Schottky barrier diode
power devices

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10.1109/ICICDT.2019.8790836

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Bu, Q., Cai, Y., Cui, M., Wen, H., & Liu, W. (2019). Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790836 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790836

Bu, Qinglei ; Cai, Yutao ; Cui, Miao et al. / Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode",

abstract = "Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (LAC). The electrical characteristics of these devices are illustrated, the turn-on voltage (VT) and breakdown voltage (BV) are compared under the related LAC. The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.",

keywords = "Breakdown voltage, lateral AlGaN/GaN Schottky barrier diode, power devices",

author = "Qinglei Bu and Yutao Cai and Miao Cui and Huiqing Wen and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

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doi = "10.1109/ICICDT.2019.8790836",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Bu, Q, Cai, Y, Cui, M , Wen, H & Liu, W 2019, Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790836, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790836

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode. / Bu, Qinglei; Cai, Yutao; Cui, Miao et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790836 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode

AU - Bu, Qinglei

AU - Cai, Yutao

AU - Cui, Miao

AU - Wen, Huiqing

AU - Liu, Wen

PY - 2019/6

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N2 - Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (LAC). The electrical characteristics of these devices are illustrated, the turn-on voltage (VT) and breakdown voltage (BV) are compared under the related LAC. The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.

AB - Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (LAC). The electrical characteristics of these devices are illustrated, the turn-on voltage (VT) and breakdown voltage (BV) are compared under the related LAC. The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.

KW - Breakdown voltage

KW - lateral AlGaN/GaN Schottky barrier diode

KW - power devices

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Bu Q, Cai Y, Cui M , Wen H , Liu W. Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790836. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790836

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode with and Without Recessed Anode

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