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Dive into the research topics of 'Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation'. Together they form a unique fingerprint.- Sort by
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Zifeng Qu*, Yizhou Jiang, Yichi Zhang, Huiqing Wen
Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review