Efficient Electric Vehicle Charger Based on Wide Band-gap Materials for V2G and G2V.

A. Waheed*, S. Rehman, M. W. Hassan, U. Sadiq, M. Asif

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

2 Citations (Scopus)

Abstract

Global warming is increasing day by day due to the use of fossil fuels that are widely used in transportation sector. To tackle these issues, Electric Vehicle are the promising choice. EVs are now using worldwide but fast charging through converters is the main challenge faced during the adaptation of EV with large space for storage and a lot of time to recharge. Wide band gap based devices are getting more attention due to their superior electrical properties. They are the next generation semiconductor devices which offer high efficiency due to their high energy band gap and high thermal conductivity that differentiate them with other semiconductor devices. EV's required efficient, fast, and reliable charging stations which is less depend on the grid. This paper presents a study of performance analysis of electrical vehicle charger by using WBG based materials. It has been demonstrated that SiC/GaN based switches offers good results for EV charging and discharging mode for V2G and G2V.

Original languageEnglish
Title of host publication8th International Conference on Engineering and Emerging Technologies, ICEET 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665491068
DOIs
Publication statusPublished - 2022
Externally publishedYes
Event8th International Conference on Engineering and Emerging Technologies, ICEET 2022 - Kuala Lumpur, Malaysia
Duration: 27 Oct 202228 Oct 2022

Publication series

Name8th International Conference on Engineering and Emerging Technologies, ICEET 2022

Conference

Conference8th International Conference on Engineering and Emerging Technologies, ICEET 2022
Country/TerritoryMalaysia
CityKuala Lumpur
Period27/10/2228/10/22

Keywords

  • High electron mobility transistors; State of Charge
  • SiC/GaN
  • THD
  • Wide-band Gap

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