@inproceedings{649c6a1f2e764145a5cb4a7c8baeaa80,
title = "Efficient Electric Vehicle Charger Based on Wide Band-gap Materials for V2G and G2V.",
abstract = "Global warming is increasing day by day due to the use of fossil fuels that are widely used in transportation sector. To tackle these issues, Electric Vehicle are the promising choice. EVs are now using worldwide but fast charging through converters is the main challenge faced during the adaptation of EV with large space for storage and a lot of time to recharge. Wide band gap based devices are getting more attention due to their superior electrical properties. They are the next generation semiconductor devices which offer high efficiency due to their high energy band gap and high thermal conductivity that differentiate them with other semiconductor devices. EV's required efficient, fast, and reliable charging stations which is less depend on the grid. This paper presents a study of performance analysis of electrical vehicle charger by using WBG based materials. It has been demonstrated that SiC/GaN based switches offers good results for EV charging and discharging mode for V2G and G2V.",
keywords = "High electron mobility transistors; State of Charge, SiC/GaN, THD, Wide-band Gap",
author = "A. Waheed and S. Rehman and Hassan, {M. W.} and U. Sadiq and M. Asif",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 8th International Conference on Engineering and Emerging Technologies, ICEET 2022 ; Conference date: 27-10-2022 Through 28-10-2022",
year = "2022",
doi = "10.1109/ICEET56468.2022.10007180",
language = "English",
series = "8th International Conference on Engineering and Emerging Technologies, ICEET 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "8th International Conference on Engineering and Emerging Technologies, ICEET 2022",
}