TY - GEN
T1 - Effects of substrate on the AC performance of submicron GaN HEMTs
AU - Rehman, S.
AU - Rafique, U.
AU - Ahmed, U. F.
AU - Khan, M. N.
AU - Ahmed, M. M.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - This paper presents a comparative study of AC performance of AlN/GaN/AlGaN high electron mobility transistor (HEMT) on Si and SiC substrates. It has been demonstrated that Si/SiC substrate offers a nominal change in the AC performance of the device. Also, Si/SiC based AlN/GaN/AlGaN HEMTs AC performance with and without substrate distributed network is assessed using particle swarm optimization technique and compared with experimental data. Equivalent intrinsic small signal parameters are extracted for both the substrates, which showed a minor change in the intrinsic small signal parameters values. Thus, Si substrate may comfortably be employed in the fabrication of AlN/GaN/AlGaN HEMT to make it cost effective.
AB - This paper presents a comparative study of AC performance of AlN/GaN/AlGaN high electron mobility transistor (HEMT) on Si and SiC substrates. It has been demonstrated that Si/SiC substrate offers a nominal change in the AC performance of the device. Also, Si/SiC based AlN/GaN/AlGaN HEMTs AC performance with and without substrate distributed network is assessed using particle swarm optimization technique and compared with experimental data. Equivalent intrinsic small signal parameters are extracted for both the substrates, which showed a minor change in the intrinsic small signal parameters values. Thus, Si substrate may comfortably be employed in the fabrication of AlN/GaN/AlGaN HEMT to make it cost effective.
KW - AC performance
KW - AlN/GaN/AlGaN
KW - High electron mobility transistors
KW - Particle swarm optimization
KW - Small signal parameters
UR - http://www.scopus.com/inward/record.url?scp=85050507011&partnerID=8YFLogxK
U2 - 10.1109/ICET.2017.8281750
DO - 10.1109/ICET.2017.8281750
M3 - Conference Proceeding
AN - SCOPUS:85050507011
T3 - Proceedings - 2017 13th International Conference on Emerging Technologies, ICET2017
SP - 1
EP - 7
BT - Proceedings - 2017 13th International Conference on Emerging Technologies, ICET2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th International Conference on Emerging Technologies, ICET2017
Y2 - 27 December 2017 through 28 December 2017
ER -