Effects of substrate on the AC performance of submicron GaN HEMTs

S. Rehman, U. Rafique, U. F. Ahmed, M. N. Khan, M. M. Ahmed

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

6 Citations (Scopus)

Abstract

This paper presents a comparative study of AC performance of AlN/GaN/AlGaN high electron mobility transistor (HEMT) on Si and SiC substrates. It has been demonstrated that Si/SiC substrate offers a nominal change in the AC performance of the device. Also, Si/SiC based AlN/GaN/AlGaN HEMTs AC performance with and without substrate distributed network is assessed using particle swarm optimization technique and compared with experimental data. Equivalent intrinsic small signal parameters are extracted for both the substrates, which showed a minor change in the intrinsic small signal parameters values. Thus, Si substrate may comfortably be employed in the fabrication of AlN/GaN/AlGaN HEMT to make it cost effective.

Original languageEnglish
Title of host publicationProceedings - 2017 13th International Conference on Emerging Technologies, ICET2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-7
Number of pages7
ISBN (Electronic)9781538622605
DOIs
Publication statusPublished - 2 Jul 2017
Externally publishedYes
Event13th International Conference on Emerging Technologies, ICET2017 - Islamabad, Pakistan
Duration: 27 Dec 201728 Dec 2017

Publication series

NameProceedings - 2017 13th International Conference on Emerging Technologies, ICET2017
Volume2018-January

Conference

Conference13th International Conference on Emerging Technologies, ICET2017
Country/TerritoryPakistan
CityIslamabad
Period27/12/1728/12/17

Keywords

  • AC performance
  • AlN/GaN/AlGaN
  • High electron mobility transistors
  • Particle swarm optimization
  • Small signal parameters

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