TY - JOUR
T1 - Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures
AU - Farazin, Javid
AU - Asl, Mehdi Shahedi
AU - Pirgholi-Givi, Gholamreza
AU - Delbari, Seyed Ali
AU - Namini, Abbas Sabahi
AU - Altındal, Şemsettin
AU - Azizian-Kalandaragh, Yashar
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2021/9
Y1 - 2021/9
N2 - In this paper, (Co–TeO2) nanostructures were synthesized using the microwave-assisted method for the fabrication of (PVP:Co–TeO2) as an organic interlayer (OI) at Al/p-Si interface. Structural and optical properties of nanostructures were investigated through XRD, SEM, EDX, and UV–Vis techniques. The interface states (Nss) energy dependence diagram were also obtained from the voltage-dependent ideality factor (n) and barrier height (BH). Experimental results confirmed that the OI improved the performance of MS structure in respect of low Nss, Rs, n, and high rectification rate (RR). Both the forward- and reverse-bias conduction mechanisms such as ohmic, space/trap-charge-limited current (SCLC/TCLC), and Poole–Frenkel/Schottky emission (PFE/SE), respectively, were implemented. Additionally, basic dielectric parameters of two structures were investigated in detail using impedance–frequency (Z–f) measurements in a wide frequency range (0.1–1000 kHz) and they were a strong function of frequency because of the existence of Nss, surface polarization, and interlayer.
AB - In this paper, (Co–TeO2) nanostructures were synthesized using the microwave-assisted method for the fabrication of (PVP:Co–TeO2) as an organic interlayer (OI) at Al/p-Si interface. Structural and optical properties of nanostructures were investigated through XRD, SEM, EDX, and UV–Vis techniques. The interface states (Nss) energy dependence diagram were also obtained from the voltage-dependent ideality factor (n) and barrier height (BH). Experimental results confirmed that the OI improved the performance of MS structure in respect of low Nss, Rs, n, and high rectification rate (RR). Both the forward- and reverse-bias conduction mechanisms such as ohmic, space/trap-charge-limited current (SCLC/TCLC), and Poole–Frenkel/Schottky emission (PFE/SE), respectively, were implemented. Additionally, basic dielectric parameters of two structures were investigated in detail using impedance–frequency (Z–f) measurements in a wide frequency range (0.1–1000 kHz) and they were a strong function of frequency because of the existence of Nss, surface polarization, and interlayer.
UR - http://www.scopus.com/inward/record.url?scp=85113144696&partnerID=8YFLogxK
U2 - 10.1007/s10854-021-06544-8
DO - 10.1007/s10854-021-06544-8
M3 - Article
AN - SCOPUS:85113144696
SN - 0957-4522
VL - 32
SP - 21909
EP - 21922
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 17
ER -