TY - GEN
T1 - Design and simulation of GaN devices and integrated circuits using ASM compact HEMT model for mixed-signal applications
AU - Lu, Shenkai
AU - Chen, Kaiwen
AU - Liu, Jiabao
AU - Cui, Pengju
AU - Li, Ang
AU - Liu, Wen
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This paper introduces the usability of the GaN advanced spice model (ASM) structure in simulating the performance of the device and circuits. The GaN high electron mobility transistor (HEMT) model of the E-mode and the D-mode could be obtained by fitting the GaN metal-insulator-semiconductor (MIS) HEMT experimental characteristics. Then these two symbols are utilized for basic logic gates as NOT and NAND. Two drivers, direct-coupled FET logic (DCFL) and pseudo-complementary FET logic (PCFL) are designed in the GaN integrated circuits. This model can also work well in achieving the digital function of the shift register. The results show the convergence and accuracy of the models while demonstrating the potential of an all-GaN mixed-signal power conversion system.
AB - This paper introduces the usability of the GaN advanced spice model (ASM) structure in simulating the performance of the device and circuits. The GaN high electron mobility transistor (HEMT) model of the E-mode and the D-mode could be obtained by fitting the GaN metal-insulator-semiconductor (MIS) HEMT experimental characteristics. Then these two symbols are utilized for basic logic gates as NOT and NAND. Two drivers, direct-coupled FET logic (DCFL) and pseudo-complementary FET logic (PCFL) are designed in the GaN integrated circuits. This model can also work well in achieving the digital function of the shift register. The results show the convergence and accuracy of the models while demonstrating the potential of an all-GaN mixed-signal power conversion system.
UR - http://www.scopus.com/inward/record.url?scp=85152189344&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS57942.2023.10071042
DO - 10.1109/SSLChinaIFWS57942.2023.10071042
M3 - Conference Proceeding
AN - SCOPUS:85152189344
T3 - Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022
SP - 61
EP - 64
BT - Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022
Y2 - 7 February 2023 through 10 February 2023
ER -