Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

Yanfei Qi, Ce Zhou Zhao, Chenguang Liu, Yuxiao Fang, Jiahuan He, Tian Luo, Li Yang, Chun Zhao

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

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