@inproceedings{346a4bb9de9843dfa8df294c8af0a97e,
title = "AlGaN/GaN FiNFET: A comparative study",
abstract = "In this paper, a comprehensive study is conducted on AlGaN/GaN FinFETs as a potential candidate for microwave and power applications. It has been described that due to superior material properties associated with GaN and electrical properties exhibited by the tri-gate structure, FinFETs offer superior results for radio frequency applications. The tri-gate structure of FinFET allows full depletion of the channel, which results in low leakage current and dynamic power loss. FinFETs offer higher current density and integration compared to other mainstream CMOS technologies.",
keywords = "AlGaN/GaN FinFET, CMOS, Comparative study, RF/power applications, Tri-gate",
author = "Ahmed, {U. F.} and S. Rehman and U. Rafique and Ahmed, {M. M.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th International Conference on Emerging Technologies, ICET 2018 ; Conference date: 21-11-2018 Through 22-11-2018",
year = "2019",
month = jan,
day = "4",
doi = "10.1109/ICET.2018.8603581",
language = "English",
series = "2018 14th International Conference on Emerging Technologies, ICET 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 14th International Conference on Emerging Technologies, ICET 2018",
}