AgTaO3 and AgNbO3 thin films by pulsed laser deposition

Jang Yong Kim; Alexander M. Grishin

doi:10.1016/j.tsf.2005.12.213

AgTaO₃ and AgNbO₃ thin films by pulsed laser deposition

Jang Yong Kim^*, Alexander M. Grishin

^*Corresponding author for this work

KTH Royal Institute of Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Silver tantalate AgTaO₃ (ATO) and silver niobate AgNbO₃ (ANO) films have been grown on to the LaAlO₃ (001) and sapphire Al₂O₃ (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO₃ (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.

Original language	English
Pages (from-to)	615-618
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2005.12.213
Publication status	Published - 25 Oct 2006
Externally published	Yes

Keywords

Coplanar waveguides
Epitaxial silver tantalate niobate films
Ferroelectric ceramics
Pulsed laser deposition
Scattering parameters measurement
Voltage tunable microwave devices

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10.1016/j.tsf.2005.12.213

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title = "AgTaO3 and AgNbO3 thin films by pulsed laser deposition",

abstract = "Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.",

keywords = "Coplanar waveguides, Epitaxial silver tantalate niobate films, Ferroelectric ceramics, Pulsed laser deposition, Scattering parameters measurement, Voltage tunable microwave devices",

author = "Kim, {Jang Yong} and Grishin, {Alexander M.}",

year = "2006",

month = oct,

day = "25",

doi = "10.1016/j.tsf.2005.12.213",

language = "English",

volume = "515",

pages = "615--618",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - AgTaO3 and AgNbO3 thin films by pulsed laser deposition

AU - Kim, Jang Yong

AU - Grishin, Alexander M.

PY - 2006/10/25

Y1 - 2006/10/25

N2 - Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.

AB - Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.

KW - Coplanar waveguides

KW - Epitaxial silver tantalate niobate films

KW - Ferroelectric ceramics

KW - Pulsed laser deposition

KW - Scattering parameters measurement

KW - Voltage tunable microwave devices

UR - http://www.scopus.com/inward/record.url?scp=33748754029&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.12.213

DO - 10.1016/j.tsf.2005.12.213

M3 - Article

AN - SCOPUS:33748754029

SN - 0040-6090

VL - 515

SP - 615

EP - 618

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2 SPEC. ISS.

ER -

AgTaO₃ and AgNbO₃ thin films by pulsed laser deposition

Abstract

Keywords

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