Abstract
Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.
Original language | English |
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Pages (from-to) | 615-618 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 2 SPEC. ISS. |
DOIs | |
Publication status | Published - 25 Oct 2006 |
Externally published | Yes |
Keywords
- Coplanar waveguides
- Epitaxial silver tantalate niobate films
- Ferroelectric ceramics
- Pulsed laser deposition
- Scattering parameters measurement
- Voltage tunable microwave devices