Adjusting the crystal orientation of the LiNbO3 thin films on Si (111) substrate by temperature: Dissipative particle dynamics simulation

Yue Liu; Qingyang Sun; Maoxin Shi; Xintong He; Ziyi Wei; Haonan Zhu; Yuejun Sun

doi:10.1080/00150193.2019.1652507

Adjusting the crystal orientation of the LiNbO₃ thin films on Si (111) substrate by temperature: Dissipative particle dynamics simulation

Yue Liu^*, Qingyang Sun, Maoxin Shi, Xintong He, Ziyi Wei, Haonan Zhu, Yuejun Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

LiNbO₃ has been widely researched and applied as nonlinear materials for several decades. To integrate LiNbO₃ and Si into one chip can offer a new tool to manipulate the optic-electrics characteristics. In this paper, the influence of temperature on the crystal orientation of LiNbO₃ thin films on Si (111) substrate is discovered by Dissipative Particle Dynamics method (DPD for short), and the thin films crystal orientation is statistic-ed with the mathematical method. The optimum growth condition of c-axis surface is well agreed with the experiment results.

Original language	English
Pages (from-to)	190-195
Number of pages	6
Journal	Ferroelectrics
Volume	550
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2019.1652507
Publication status	Published - 3 Oct 2019
Externally published	Yes

Keywords

crystal orientation
LiNbO
Silicon
thin films

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10.1080/00150193.2019.1652507

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@article{dd297fbea715495eab43c28c28d481ea,

title = "Adjusting the crystal orientation of the LiNbO3 thin films on Si (111) substrate by temperature: Dissipative particle dynamics simulation",

abstract = "LiNbO3 has been widely researched and applied as nonlinear materials for several decades. To integrate LiNbO3 and Si into one chip can offer a new tool to manipulate the optic-electrics characteristics. In this paper, the influence of temperature on the crystal orientation of LiNbO3 thin films on Si (111) substrate is discovered by Dissipative Particle Dynamics method (DPD for short), and the thin films crystal orientation is statistic-ed with the mathematical method. The optimum growth condition of c-axis surface is well agreed with the experiment results.",

keywords = "crystal orientation, LiNbO, Silicon, thin films",

author = "Yue Liu and Qingyang Sun and Maoxin Shi and Xintong He and Ziyi Wei and Haonan Zhu and Yuejun Sun",

note = "Publisher Copyright: {\textcopyright} 2019, {\textcopyright} 2019 Taylor & Francis Group, LLC.",

year = "2019",

month = oct,

day = "3",

doi = "10.1080/00150193.2019.1652507",

language = "English",

volume = "550",

pages = "190--195",

journal = "Ferroelectrics",

issn = "0015-0193",

number = "1",

}

TY - JOUR

T1 - Adjusting the crystal orientation of the LiNbO3 thin films on Si (111) substrate by temperature

T2 - Dissipative particle dynamics simulation

AU - Liu, Yue

AU - Sun, Qingyang

AU - Shi, Maoxin

AU - He, Xintong

AU - Wei, Ziyi

AU - Zhu, Haonan

AU - Sun, Yuejun

PY - 2019/10/3

Y1 - 2019/10/3

N2 - LiNbO3 has been widely researched and applied as nonlinear materials for several decades. To integrate LiNbO3 and Si into one chip can offer a new tool to manipulate the optic-electrics characteristics. In this paper, the influence of temperature on the crystal orientation of LiNbO3 thin films on Si (111) substrate is discovered by Dissipative Particle Dynamics method (DPD for short), and the thin films crystal orientation is statistic-ed with the mathematical method. The optimum growth condition of c-axis surface is well agreed with the experiment results.

AB - LiNbO3 has been widely researched and applied as nonlinear materials for several decades. To integrate LiNbO3 and Si into one chip can offer a new tool to manipulate the optic-electrics characteristics. In this paper, the influence of temperature on the crystal orientation of LiNbO3 thin films on Si (111) substrate is discovered by Dissipative Particle Dynamics method (DPD for short), and the thin films crystal orientation is statistic-ed with the mathematical method. The optimum growth condition of c-axis surface is well agreed with the experiment results.

KW - crystal orientation

KW - LiNbO

KW - Silicon

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85074295402&partnerID=8YFLogxK

U2 - 10.1080/00150193.2019.1652507

DO - 10.1080/00150193.2019.1652507

M3 - Article

AN - SCOPUS:85074295402

SN - 0015-0193

VL - 550

SP - 190

EP - 195

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Adjusting the crystal orientation of the LiNbO₃ thin films on Si (111) substrate by temperature: Dissipative particle dynamics simulation

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Keywords

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