A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure

Zhonghao Sun, Huolin Huang*, Nan Sun, Pengcheng Tao, Cezhou Zhao, Yung C. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Fingerprint

Dive into the research topics of 'A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure'. Together they form a unique fingerprint.

Physics

Material Science

Engineering

Computer Science