A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Jiajia Chen; Jiaqiang Yang; Shiyou Yang; Xingjian Li

doi:10.1109/TMAG.2017.2665521

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Jiajia Chen, Jiaqiang Yang^*, Shiyou Yang, Xingjian Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.

Original language	English
Article number	7845695
Journal	IEEE Transactions on Magnetics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2017.2665521
Publication status	Published - Jun 2017
Externally published	Yes

Keywords

Ambipolar diffusion equation (ADE)
insulated gate bipolar transistor (IGBT)
transient behavior

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10.1109/TMAG.2017.2665521

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title = "A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors",

abstract = "To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.",

keywords = "Ambipolar diffusion equation (ADE), insulated gate bipolar transistor (IGBT), transient behavior",

author = "Jiajia Chen and Jiaqiang Yang and Shiyou Yang and Xingjian Li",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by the National Natural Science Foundation of China under Grants 51490682 and Grant 51377139. Publisher Copyright: {\textcopyright} 2017 IEEE.",

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language = "English",

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AU - Chen, Jiajia

AU - Yang, Jiaqiang

AU - Yang, Shiyou

AU - Li, Xingjian

PY - 2017/6

Y1 - 2017/6

N2 - To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.

AB - To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.

KW - Ambipolar diffusion equation (ADE)

KW - insulated gate bipolar transistor (IGBT)

KW - transient behavior

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

M1 - 7845695

ER -

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

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Keywords

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