@inproceedings{174fe6ebc9fb475f91db0afd5db1c750,
title = "A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric",
abstract = "With the advancement of Semiconductor Technology, FinFET replaces MOSFET. It is one of the frontier devices due to suppressed short channel effects, outstanding performance for high-frequency applications, and better power control. This paper proposed a FinFET structure with different analytical models for drain-current, channel charge, and velocity. The dielectric materials of different underlap lengths for gate oxide have been implemented and compared their performance for SCE. The short channel effects for dielectric materials SiO2, and Al2O3 are also examined. The critical parameters such as threshold gate voltages and drain current, including short channel effects have been evaluated using the proposed model. The transfer and output characteristics have been shown. FinFET with high-k dielectric shows higher Ion/Ioff ratio and reduced threshold voltage. These results validate the proposed model to reduce the SCE.",
keywords = "Drain current, FinFET, Gate voltages, Short channel effect",
author = "Asif, {Rao Muhammad} and Rehman, {Saif Ur} and Rehman, {Ateeq Ur} and Mohit Bajaj and Subhashree Choudhury and Dash, {T. P.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference in Advances in Power, Signal, and Information Technology, APSIT 2021 ; Conference date: 08-10-2021 Through 10-10-2021",
year = "2021",
doi = "10.1109/APSIT52773.2021.9641388",
language = "English",
series = "2021 International Conference in Advances in Power, Signal, and Information Technology, APSIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Niranjan Nayak and Taraprasanna Dash and Tanmoy Parida",
booktitle = "2021 International Conference in Advances in Power, Signal, and Information Technology, APSIT 2021",
}