Material Science
Aluminium Ion
18%
Aluminum
16%
Annealing
36%
Buffer Layer
21%
Bulk Silicon
16%
Chemical Property
16%
Chemical State
16%
Crystalline Material
32%
Delamination
16%
Density
78%
Devices
55%
Diode
35%
Dislocation
72%
Edge Dislocation
16%
Electrical Property
24%
Electrical Resistivity
16%
Electron Mobility
50%
Electronic Property
16%
Electronic Structure
16%
Electronics
19%
Epitaxy
36%
Film
21%
Fourier Transform Raman Spectroscopy
16%
Gallium Arsenide
16%
Gallium Nitride
32%
Graphene
32%
Heterojunction
68%
Ion Implantation
16%
Materials
31%
Materials Property
20%
Microstructure
26%
Nitride Compound
20%
Nitride Semiconductor
16%
Optical Property
27%
Optoelectronics
21%
Oxygen Vacancy
21%
Reflectivity
16%
Schottky Barrier
41%
Schottky Diode
32%
Silicon
40%
Silicon Carbide
16%
Strain
32%
Stress Measurement
16%
Surface Morphology
23%
Temperature
100%
Thin Films
16%
Transistor
32%
Wide Bandgap Semiconductor
16%
X-Ray Photoelectron Spectroscopy
20%
Zirconia
16%
Engineering
Alternative Material
5%
Annealing
16%
Annealing Effect
16%
Atomic Layer
6%
Bridge Circuits
16%
Carbon Incorporation
5%
Cleaning Method
8%
Defect Density
5%
Delamination
10%
Demonstrates
16%
Deposition Method
5%
Dislocation
5%
Dislocation Density
16%
down Process
5%
Edge Dislocation
16%
Enhanced Strain
16%
Epitaxial Film
12%
Epitaxial Layer
10%
Flow Growth
8%
Frequency Dependence
5%
Growth Condition
5%
Growth Kinetics
8%
Growth Mechanism
16%
Growth Surface
8%
High Electric Field
16%
Implant
16%
Interface Trap
10%
Interfacial Defect
5%
Lattice Site
16%
Material Quality
5%
Mechanisms
16%
Metal Organic Chemical Vapor Deposition
5%
N-Type Doping
5%
Native Defect
5%
Nitride Semiconductor
16%
Optical Reflectivity
5%
Reactor Wall
8%
Sample Structure
5%
Sapphire Substrate
5%
Schottky Barrier Diode
16%
Semiconductor Structure
5%
Sheet Resistance
8%
Surface Analysis Method
8%
Valence Band
5%
Earth and Planetary Sciences
Bias
16%
Condition
9%
Dislocation
16%
Electron
11%
Hot Electron
20%
Leakage
32%
Model
6%
Quality
16%
Rate
5%
Room Temperature
8%
Schottky Diode
16%
State
8%
Stress Measurement
16%
Substrate
35%
Temperature
6%
Time
5%
Transport Property
16%
Trap
16%
