@inproceedings{2050bfbb894e481dbbcd65196c9cef1b,
title = "Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing",
abstract = "On-wafer measurements were performed for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) configured as single-ended radio-frequency (RF) mixers. While the depletion-mode (D-mode) HEMTs have a negative threshold voltage, the RF passive mixer design requires no negative biasing and draws no electrical power. A conversion loss as small as 13 dB is obtained, which is quite close to the ideal value of 9.9 dB for a single-ended passive mixer using a perfect switch. The 1-dB compression point (at the input) ranges from -1.3dBm to 5 dBm for different aspect ratios of the MIS-HEMTs. With a local oscillator (LO) power of 1 dBm, an input third order intercept point (IP3) of 12 dBm is obtained for a MIS-HEMT of W/L = 100/3, achieving a linear efficiency of 11 dB. The experimental results demonstrate the workable use of D-mode MIS-HEMTs as they are in realizing RF mixers for development of RFICs on gallium nitride (GaN) technology. With adjusted design, the normally-on device property of the MIS-HEMTs does not deter their direct use in proper circuit construction.",
keywords = "D-mode MIS-HEMT, depletion-mode FET, gallium nitride (GaN), linearity, passive mixer, RF mixer",
author = "Ruolan Shi and Zixuan Zhang and Miao Cui and Sang Lam",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023 ; Conference date: 20-10-2023 Through 23-10-2023",
year = "2023",
doi = "10.1109/ICICM59499.2023.10365756",
language = "English",
series = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "427--431",
booktitle = "2023 8th International Conference on Integrated Circuits and Microsystems, ICICM 2023",
}