Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors

Wangying Xu; Chuyu Xu; Zhibo Zhang; Weicheng Huang; Qiubao Lin; Shuangmu Zhuo; Fang Xu; Xinke Liu; Deliang Zhu; Chun Zhao

doi:10.3390/nano12162880

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors

Wangying Xu^*, Chuyu Xu, Zhibo Zhang, Weicheng Huang, Qiubao Lin, Shuangmu Zhuo, Fang Xu^*, Xinke Liu, Deliang Zhu, Chun Zhao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm²/Vs and on/off current ratio of ~10⁶ based on Si/SiO₂ substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr₂O₃ and In₂O₃, and In-Pr-O channel’s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

Original language	English
Article number	2880
Journal	Nanomaterials
Volume	12
Issue number	16
DOIs	https://doi.org/10.3390/nano12162880
Publication status	Published - Aug 2022

Keywords

indium-praseodymium oxide
nanometer-thick
oxide thin-film transistors
water-induced

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@article{270b50d0949f4526874c607f9f3a1b73,

title = "Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors",

abstract = "We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel{\textquoteright}s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.",

keywords = "indium-praseodymium oxide, nanometer-thick, oxide thin-film transistors, water-induced",

author = "Wangying Xu and Chuyu Xu and Zhibo Zhang and Weicheng Huang and Qiubao Lin and Shuangmu Zhuo and Fang Xu and Xinke Liu and Deliang Zhu and Chun Zhao",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China (61704111, 62001308 and 12074263), Shenzhen Science and Technology Program (20200803151643007) and the Pearl River Talents Plan of Guangdong Province (2017GC010092). Fang Xu gratefully acknowledges support from Natural Science Foundation of Top Talent of SZTU (20200219) and Shenzhen Outstanding Scientific and Technological Innovation Talent Training Project (RCBS20210609103736094). Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = aug,

doi = "10.3390/nano12162880",

language = "English",

volume = "12",

journal = "Nanomaterials",

issn = "2079-4991",

number = "16",

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TY - JOUR

T1 - Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors

AU - Xu, Wangying

AU - Xu, Chuyu

AU - Zhang, Zhibo

AU - Huang, Weicheng

AU - Lin, Qiubao

AU - Zhuo, Shuangmu

AU - Xu, Fang

AU - Liu, Xinke

AU - Zhu, Deliang

AU - Zhao, Chun

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China (61704111, 62001308 and 12074263), Shenzhen Science and Technology Program (20200803151643007) and the Pearl River Talents Plan of Guangdong Province (2017GC010092). Fang Xu gratefully acknowledges support from Natural Science Foundation of Top Talent of SZTU (20200219) and Shenzhen Outstanding Scientific and Technological Innovation Talent Training Project (RCBS20210609103736094). Publisher Copyright: © 2022 by the authors.

PY - 2022/8

Y1 - 2022/8

N2 - We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel’s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

AB - We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel’s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

KW - indium-praseodymium oxide

KW - nanometer-thick

KW - oxide thin-film transistors

KW - water-induced

UR - http://www.scopus.com/inward/record.url?scp=85137406491&partnerID=8YFLogxK

U2 - 10.3390/nano12162880

DO - 10.3390/nano12162880

M3 - Article

AN - SCOPUS:85137406491

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

IS - 16

M1 - 2880

ER -

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors

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