@inproceedings{c7b47848db944422bac4b383e2a46d71,
title = "Water-induced Combustion-processed Metal-oxide Synaptic Transistor",
abstract = "In this study, we describe combustion-processed high-quality Li-AlOx thin films and their implementation in In-2O3 synaptic transistors by a low temperatures (300 °C) water-based method. The resulting synaptic transistors presented a superior electrical performance at a low operating voltage of 3 V, with a positive threshold voltage of 0.5 V, a subthreshold swing of 0.21 V/decade, an On/Off ratio of 1.5×105, and a mobility value of 87 cm V s. Counterclockwise hysteresis was observed in the transfer curve and the synaptic transistor was employed to perform synaptic emulation. Long-term and short-term synaptic depression and potentiation behavior were emulated.",
keywords = "High-k dielectric, Metal oxide, Solution process, Synaptic transistor",
author = "Qihan Liu and C. Zhao and Y. Liu and Mitrovic, {I. Z.} and Xu, {W. Y.} and L. Yang and Z. Wang and W. Wei and Y. Wu and X. Yu",
note = "Funding Information: Program (19KJB510059), the Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation (SYG201924), and the Key Program Special Fund in XJTLU (KSFP-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A- Funding Information: This research was funded in part by the Natural Science Funding Information: Foundation of the Jiangsu Higher Education Institutions of China Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference on IC Design and Technology, ICICDT 2021 ; Conference date: 15-09-2021 Through 17-09-2021",
year = "2021",
doi = "10.1109/ICICDT51558.2021.9626483",
language = "English",
series = "2021 International Conference on IC Design and Technology, ICICDT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 International Conference on IC Design and Technology, ICICDT 2021",
}