@inproceedings{f293364f6a7c4163a91d89866d3ebf87,
title = "The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation",
abstract = "This paper presents the investigation of the source field plate geometry on the p-GaN/GaN/AlGaN HEMT bidirectional switch using TCAD simulation. The output and transfer characteristics of both single-gate and dual-gate GaN devices are obtained. Moreover, the impact of the source field plate on the dynamic on-resistance of the p-GaN gate device is verified. Building upon previous research on field plates, this study examines the field plate's influence on breakdown voltage from two perspectives. The first aspect considers the number of field plate layers. Adjusting the length of the two field plate layers shows that the breakdown voltage could reach a peak value. The second aspect focuses on the field plate geometry. Increasing the transverse and longitudinal distance between the field plate and the gate effectively enhances the device's breakdown performance.",
keywords = "Bidirectional Switch, Breakdown Voltage, Dynamic On-resistance, Field Plate, Gallium Nitride",
author = "Xuan Chi and Yubo Wang and Fan Li and Yixiao Huang and Chenruiyuan Yu and Shiqiang Wu and Huiqing Wen and Jiangmin Gu and Ping Zhang and Wen Liu",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on IC Design and Technology, ICICDT 2023 ; Conference date: 25-09-2023 Through 27-09-2023",
year = "2023",
doi = "10.1109/ICICDT59917.2023.10332430",
language = "English",
series = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "148--151",
editor = "Duy-Hieu Bui",
booktitle = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",
}