The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters

Miao Cui; Yutao Cai; Qinglei Bu; Wen Liu; Huiqing Wen; Ivona Z. Mitrovic; Stephen Talyor; Paul R. Chalker; Cezhou Zhao

doi:10.1109/ICICDT.2019.8790909

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters

Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Talyor, Paul R. Chalker, Cezhou Zhao

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

3 Citations (Scopus)

Abstract

Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790909
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

AlGaN/GaN MIS-HEMTs
DCFL inverters
etch depth
high temperature

Access to Document

10.1109/ICICDT.2019.8790909

Cite this

Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., Talyor, S., Chalker, P. R., & Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790909 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790909

Cui, Miao ; Cai, Yutao ; Bu, Qinglei et al. / The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters",

abstract = "Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.",

keywords = "AlGaN/GaN MIS-HEMTs, DCFL inverters, etch depth, high temperature",

author = "Miao Cui and Yutao Cai and Qinglei Bu and Wen Liu and Huiqing Wen and Mitrovic, {Ivona Z.} and Stephen Talyor and Chalker, {Paul R.} and Cezhou Zhao",

note = "Funding Information: Acknowledgment This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(18KJB470023),Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12), and the XJTLU Research Development Fund (PGRS-13-03-01 and RDF-14-02-02). Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790909",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Cui, M, Cai, Y, Bu, Q , Liu, W , Wen, H, Mitrovic, IZ, Talyor, S, Chalker, PR & Zhao, C 2019, The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790909, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790909

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters. / Cui, Miao; Cai, Yutao; Bu, Qinglei et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790909 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters

AU - Cui, Miao

AU - Cai, Yutao

AU - Bu, Qinglei

AU - Liu, Wen

AU - Wen, Huiqing

AU - Mitrovic, Ivona Z.

AU - Talyor, Stephen

AU - Chalker, Paul R.

AU - Zhao, Cezhou

N1 - Funding Information: Acknowledgment This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(18KJB470023),Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12), and the XJTLU Research Development Fund (PGRS-13-03-01 and RDF-14-02-02). Publisher Copyright: © 2019 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.

AB - Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.

KW - AlGaN/GaN MIS-HEMTs

KW - DCFL inverters

KW - etch depth

KW - high temperature

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T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

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Cui M, Cai Y, Bu Q , Liu W , Wen H, Mitrovic IZ et al. The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790909. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790909

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 v Input Direct-Coupled FET Logic (DCFL) Inverters

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