The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs

Shiqiang Wu; Fan Li; Yuhao Zhu; Yixiao Huang; Chenruiyuan Yu; Yubo Wang; Xuan Chi; Huiqing Wen; Wen Liu

doi:10.1109/ICICDT59917.2023.10332312

The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs

Shiqiang Wu, Fan Li, Yuhao Zhu, Yixiao Huang, Chenruiyuan Yu, Yubo Wang, Xuan Chi, Huiqing Wen, Wen Liu^*

^*Corresponding author for this work

School of Advanced Technology

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

In this paper, the Hydrogen plasma treated device (H-treated device) and p-GaN gate HEMT device with etching process at the access region (Etched device) are monolithically fabricated on the same platform. The investigation focuses on the dynamic on-resistance (Ron) and device capacitance due to their essential role in dynamic applications. The results show that despite the similar DC characteristics from H-treated and the etched device, the hydrogen treated layer can improve the dynamic Ron degradation at different periods. The Cgd and Cds of the device are also changed due to the presence of the hydrogen treated layer. The dynamic performance of the DCFL inverter is compared to investigate the impact on rise time and fall time from two fabrication methods.

Original language	English
Title of host publication	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023
Editors	Duy-Hieu Bui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	152-155
Number of pages	4
ISBN (Electronic)	9798350319316
DOIs	https://doi.org/10.1109/ICICDT59917.2023.10332312
Publication status	Published - 2023
Event	2023 International Conference on IC Design and Technology, ICICDT 2023 - Tokyo, Japan Duration: 25 Sept 2023 → 27 Sept 2023

Publication series

Name	Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

Conference

Conference	2023 International Conference on IC Design and Technology, ICICDT 2023
Country/Territory	Japan
City	Tokyo
Period	25/09/23 → 27/09/23

Keywords

AlGaN/GaN p-GaN-HEMTs
Device capacitance
Dynamic on-resistance
Etched
Hydrogen plasma Treatment
Inverter circuits

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10.1109/ICICDT59917.2023.10332312

Cite this

Wu, S., Li, F., Zhu, Y., Huang, Y., Yu, C., Wang, Y., Chi, X., Wen, H., & Liu, W. (2023). The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. In D.-H. Bui (Ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023 (pp. 152-155). (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT59917.2023.10332312

Wu, Shiqiang ; Li, Fan ; Zhu, Yuhao et al. / The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. editor / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 152-155 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

@inproceedings{2f20a3140794470ba7dd6106447c6730,

title = "The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs",

abstract = "In this paper, the Hydrogen plasma treated device (H-treated device) and p-GaN gate HEMT device with etching process at the access region (Etched device) are monolithically fabricated on the same platform. The investigation focuses on the dynamic on-resistance (Ron) and device capacitance due to their essential role in dynamic applications. The results show that despite the similar DC characteristics from H-treated and the etched device, the hydrogen treated layer can improve the dynamic Ron degradation at different periods. The Cgd and Cds of the device are also changed due to the presence of the hydrogen treated layer. The dynamic performance of the DCFL inverter is compared to investigate the impact on rise time and fall time from two fabrication methods.",

keywords = "AlGaN/GaN p-GaN-HEMTs, Device capacitance, Dynamic on-resistance, Etched, Hydrogen plasma Treatment, Inverter circuits",

author = "Shiqiang Wu and Fan Li and Yuhao Zhu and Yixiao Huang and Chenruiyuan Yu and Yubo Wang and Xuan Chi and Huiqing Wen and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on IC Design and Technology, ICICDT 2023 ; Conference date: 25-09-2023 Through 27-09-2023",

year = "2023",

doi = "10.1109/ICICDT59917.2023.10332312",

language = "English",

series = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "152--155",

editor = "Duy-Hieu Bui",

booktitle = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",

}

Wu, S, Li, F, Zhu, Y, Huang, Y, Yu, C, Wang, Y, Chi, X, Wen, H & Liu, W 2023, The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. in D-H Bui (ed.), Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023, Institute of Electrical and Electronics Engineers Inc., pp. 152-155, 2023 International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, 25/09/23. https://doi.org/10.1109/ICICDT59917.2023.10332312

The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. / Wu, Shiqiang; Li, Fan; Zhu, Yuhao et al.
Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. ed. / Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2023. p. 152-155 (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs

AU - Wu, Shiqiang

AU - Li, Fan

AU - Zhu, Yuhao

AU - Huang, Yixiao

AU - Yu, Chenruiyuan

AU - Wang, Yubo

AU - Chi, Xuan

AU - Wen, Huiqing

AU - Liu, Wen

PY - 2023

Y1 - 2023

N2 - In this paper, the Hydrogen plasma treated device (H-treated device) and p-GaN gate HEMT device with etching process at the access region (Etched device) are monolithically fabricated on the same platform. The investigation focuses on the dynamic on-resistance (Ron) and device capacitance due to their essential role in dynamic applications. The results show that despite the similar DC characteristics from H-treated and the etched device, the hydrogen treated layer can improve the dynamic Ron degradation at different periods. The Cgd and Cds of the device are also changed due to the presence of the hydrogen treated layer. The dynamic performance of the DCFL inverter is compared to investigate the impact on rise time and fall time from two fabrication methods.

AB - In this paper, the Hydrogen plasma treated device (H-treated device) and p-GaN gate HEMT device with etching process at the access region (Etched device) are monolithically fabricated on the same platform. The investigation focuses on the dynamic on-resistance (Ron) and device capacitance due to their essential role in dynamic applications. The results show that despite the similar DC characteristics from H-treated and the etched device, the hydrogen treated layer can improve the dynamic Ron degradation at different periods. The Cgd and Cds of the device are also changed due to the presence of the hydrogen treated layer. The dynamic performance of the DCFL inverter is compared to investigate the impact on rise time and fall time from two fabrication methods.

KW - AlGaN/GaN p-GaN-HEMTs

KW - Device capacitance

KW - Dynamic on-resistance

KW - Etched

KW - Hydrogen plasma Treatment

KW - Inverter circuits

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M3 - Conference Proceeding

AN - SCOPUS:85180811894

T3 - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

SP - 152

EP - 155

BT - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023

A2 - Bui, Duy-Hieu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Conference on IC Design and Technology, ICICDT 2023

Y2 - 25 September 2023 through 27 September 2023

ER -

Wu S, Li F, Zhu Y, Huang Y, Yu C, Wang Y et al. The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. In Bui DH, editor, Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 152-155. (Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023). doi: 10.1109/ICICDT59917.2023.10332312

The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs

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