TY - GEN
T1 - TCAD Simulation of Dual-Gate p-GaN/AlGaN/GaN HEMT Bidirectional Switch
AU - Li, Fan
AU - Wang, Yubo
AU - Yuan, Chenjie
AU - Sun, Ruize
AU - Ding, Chengmurong
AU - Cui, Miao
AU - Zhao, Yinchao
AU - Wen, Huiqing
AU - Liu, Wen
N1 - Funding Information:
This work was supported by the Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Suzhou Science and Technology program (SYG201923, SYG202113), the Key Program Special Fund in Xi'an Jiaotong–Liverpool University (XJTLU) (KSF-T-07), and the XJTLU Research Development Fund (PGRS1912003, RDF-20-02-43, RDF-20-02-62).
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - The bidirectional switch has great potential in AC-AC matrix converter and other power electronics areas. In this work, the TCAD simulation of p-GaN/AlGaN/GaN High Electron Mobility Transistor (HEMT)dual-gate bidirectional switch is systematically carried out. The static I-V characteristics and the bidirectional conduction ability are presented to prove the successful establishment of our model. These results are consistent with the trends from previous literature. By changing the separation distance between two gates when the device's total size remains the same, the off-state breakdown voltage is improved to 1571V under gate voltage of 0V. The simulation points out the direction to improve the performance of monolithic GaN bidirectional switches in high voltage applications.
AB - The bidirectional switch has great potential in AC-AC matrix converter and other power electronics areas. In this work, the TCAD simulation of p-GaN/AlGaN/GaN High Electron Mobility Transistor (HEMT)dual-gate bidirectional switch is systematically carried out. The static I-V characteristics and the bidirectional conduction ability are presented to prove the successful establishment of our model. These results are consistent with the trends from previous literature. By changing the separation distance between two gates when the device's total size remains the same, the off-state breakdown voltage is improved to 1571V under gate voltage of 0V. The simulation points out the direction to improve the performance of monolithic GaN bidirectional switches in high voltage applications.
UR - http://www.scopus.com/inward/record.url?scp=85125353292&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS54608.2021.9675261
DO - 10.1109/SSLChinaIFWS54608.2021.9675261
M3 - Conference Proceeding
AN - SCOPUS:85125353292
T3 - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
SP - 49
EP - 52
BT - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
Y2 - 6 December 2021 through 8 December 2021
ER -