Synaptic transistors based on transparent oxide for neural image recognition

Q. N. Wang, C. Zhao, W. Liu, I. Z. Mitrovic, H. Van Zalinge, Y. N. Liu, C. Z. Zhao

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

Artificial synaptic devices are the critical component for large-scale neuromorphic computing, which surpasses the limitations of von Neumann's structure. Recently the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to the conductance can be updated by the gate voltage stimulation. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The suitable ion doping concentration is obtained by the synaptic electrical characteristic. The synaptic transistor also has a low-noise linear conductance update and a relatively high Gmax/Gmin ratio.

Original languageEnglish
Title of host publication2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665437455
DOIs
Publication statusPublished - 1 Sept 2021
Event2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021 - Caen, France
Duration: 1 Sept 20213 Sept 2021

Publication series

Name2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021

Conference

Conference2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
Country/TerritoryFrance
CityCaen
Period1/09/213/09/21

Keywords

  • MNIST
  • image recognition
  • neural computing
  • solution-processed transistor
  • synaptic device

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