Synaptic Thin-Film Transistor Model based on Behavioral Simulation

Rui Li; Shenjian Zhang; Junyan Li; Yechen Lin; Changlin Qian; Yuxin Guan; Chun Zhao

doi:10.1109/LASCAS64004.2025.10966337

Synaptic Thin-Film Transistor Model based on Behavioral Simulation

Rui Li, Shenjian Zhang, Junyan Li, Yechen Lin, Changlin Qian, Yuxin Guan, Chun Zhao

Department of Electrical and Electronic Engineering

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

This work presents an advanced behavioral simulation model for artificial synaptic transistors, developed to address the limitations of existing models in accurately capturing the dynamic behavior of Synaptic Thin-Film Transistor (STFT). Our model, derived from the charge transfer mechanism, offers a comprehensive emulation of the fundamental characteristics (Including: output characteristic curve, transfer characteristic curve, long-term potentiation curve, paired-pulse facilitation curve, excitatory post-synaptic current curve) of artificial synaptic transistors fabricated by aqueous solution process.

Original language	English
Title of host publication	2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331522124
DOIs	https://doi.org/10.1109/LASCAS64004.2025.10966337
Publication status	Published - 2025
Event	16th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2025 - Bento Goncalves, Brazil Duration: 25 Feb 2025 → 28 Feb 2025

Publication series

Name	2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings

Conference

Conference	16th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2025
Country/Territory	Brazil
City	Bento Goncalves
Period	25/02/25 → 28/02/25

Keywords

artificial synapse
behavioral simulation
neuromorphic computing
thin-film transistor

Access to Document

10.1109/LASCAS64004.2025.10966337

Cite this

Li, R., Zhang, S., Li, J., Lin, Y., Qian, C., Guan, Y., & Zhao, C. (2025). Synaptic Thin-Film Transistor Model based on Behavioral Simulation. In 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings (2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS64004.2025.10966337

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title = "Synaptic Thin-Film Transistor Model based on Behavioral Simulation",

abstract = "This work presents an advanced behavioral simulation model for artificial synaptic transistors, developed to address the limitations of existing models in accurately capturing the dynamic behavior of Synaptic Thin-Film Transistor (STFT). Our model, derived from the charge transfer mechanism, offers a comprehensive emulation of the fundamental characteristics (Including: output characteristic curve, transfer characteristic curve, long-term potentiation curve, paired-pulse facilitation curve, excitatory post-synaptic current curve) of artificial synaptic transistors fabricated by aqueous solution process.",

keywords = "artificial synapse, behavioral simulation, neuromorphic computing, thin-film transistor",

author = "Rui Li and Shenjian Zhang and Junyan Li and Yechen Lin and Changlin Qian and Yuxin Guan and Chun Zhao",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 16th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2025 ; Conference date: 25-02-2025 Through 28-02-2025",

year = "2025",

doi = "10.1109/LASCAS64004.2025.10966337",

language = "English",

series = "2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings",

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Li, R, Zhang, S, Li, J, Lin, Y, Qian, C, Guan, Y & Zhao, C 2025, Synaptic Thin-Film Transistor Model based on Behavioral Simulation. in 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings. 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 16th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2025, Bento Goncalves, Brazil, 25/02/25. https://doi.org/10.1109/LASCAS64004.2025.10966337

Synaptic Thin-Film Transistor Model based on Behavioral Simulation. / Li, Rui; Zhang, Shenjian; Li, Junyan et al.
2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Li, Rui

AU - Zhang, Shenjian

AU - Li, Junyan

AU - Lin, Yechen

AU - Qian, Changlin

AU - Guan, Yuxin

AU - Zhao, Chun

PY - 2025

Y1 - 2025

N2 - This work presents an advanced behavioral simulation model for artificial synaptic transistors, developed to address the limitations of existing models in accurately capturing the dynamic behavior of Synaptic Thin-Film Transistor (STFT). Our model, derived from the charge transfer mechanism, offers a comprehensive emulation of the fundamental characteristics (Including: output characteristic curve, transfer characteristic curve, long-term potentiation curve, paired-pulse facilitation curve, excitatory post-synaptic current curve) of artificial synaptic transistors fabricated by aqueous solution process.

AB - This work presents an advanced behavioral simulation model for artificial synaptic transistors, developed to address the limitations of existing models in accurately capturing the dynamic behavior of Synaptic Thin-Film Transistor (STFT). Our model, derived from the charge transfer mechanism, offers a comprehensive emulation of the fundamental characteristics (Including: output characteristic curve, transfer characteristic curve, long-term potentiation curve, paired-pulse facilitation curve, excitatory post-synaptic current curve) of artificial synaptic transistors fabricated by aqueous solution process.

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KW - behavioral simulation

KW - neuromorphic computing

KW - thin-film transistor

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U2 - 10.1109/LASCAS64004.2025.10966337

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M3 - Conference Proceeding

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T3 - 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings

BT - 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2025

Y2 - 25 February 2025 through 28 February 2025

ER -

Li R, Zhang S, Li J, Lin Y, Qian C, Guan Y et al. Synaptic Thin-Film Transistor Model based on Behavioral Simulation. In 2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2025. (2025 IEEE 16th Latin American Symposium on Circuits and Systems, LASCAS 2025 - Proceedings). doi: 10.1109/LASCAS64004.2025.10966337

Synaptic Thin-Film Transistor Model based on Behavioral Simulation

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