TY - GEN
T1 - Study of PEALD-AlN as Dielectric Layer in GaN MIS-HEMTs
AU - Zhang, Xuanming
AU - Fu, Xiang
AU - Zhang, Yuanlei
AU - Duan, Jiachen
AU - Kong, Zhijie
AU - Liu, Wen
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, the Aluminum Nitride (AlN) film was investigated based on Plasma-Enhanced Atomic Layer Deposition (PEALD) by varying process parameters (RF power, NH3 pulse time, temperature). The optimized AlN achieved a high breakdown voltage of 18 V on Si. The 10 nm AlN film is demonstrated as a dielectric layer in GaN MIS- HEMTs. The devices exhibited a threshold voltage ($V_{\text{TH}}$) of -4.4 V and a peak transconductance (gmax) that reached 171.3 mS/mm. Furthermore, the leakage current test results indicate that the device exhibits characteristics more aligned with Schottky contact performance.
AB - In this paper, the Aluminum Nitride (AlN) film was investigated based on Plasma-Enhanced Atomic Layer Deposition (PEALD) by varying process parameters (RF power, NH3 pulse time, temperature). The optimized AlN achieved a high breakdown voltage of 18 V on Si. The 10 nm AlN film is demonstrated as a dielectric layer in GaN MIS- HEMTs. The devices exhibited a threshold voltage ($V_{\text{TH}}$) of -4.4 V and a peak transconductance (gmax) that reached 171.3 mS/mm. Furthermore, the leakage current test results indicate that the device exhibits characteristics more aligned with Schottky contact performance.
UR - http://www.scopus.com/inward/record.url?scp=85184667784&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS60785.2023.10399714
DO - 10.1109/SSLChinaIFWS60785.2023.10399714
M3 - Conference Proceeding
AN - SCOPUS:85184667784
T3 - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
SP - 181
EP - 182
BT - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
Y2 - 27 November 2023 through 30 November 2023
ER -