@inproceedings{79926e5cf77e4ca99f42c0136e69af7e,
title = "Study of Drain-current Collapse in AlGaN/GaN MIS-HEMTs with Different Gate Lengths",
abstract = "Currently, the current collapse phenomenon in normally-on GaN MIS-HEMTs with different gate lengths has not been thoroughly investigated. In this work, three DUTs of the same size with different gate lengths of 3/6/8 μm were chosen to study current collapse during off-/on-state stress. It is found that current collapse is suppressed under on-state stress due to the formation of de-trapping paths. Current collapse is severe at high-drain off-state stress due to activated traps in the AlGaN barrier layer. Moreover, the current collapse is more severe with decreasing gate lengths, which means more interface traps are exposed to the access region.",
keywords = "current collapse, GaN MIS-HEMTs, normally-on device, off-state stress, on-state stress",
author = "Ye Liang and Yuanlei Zhang and Xiuyuan He and Yinchao Zhao and Miao Cui and Huiqing Wen and Wen Liu",
note = "Funding Information: This work was supported by the Suzhou Science and Technology program (SYG201923，SYG202131), the Key Program Special Fund in Xi{\textquoteright}an Jiaotong–Liverpool University (XJTLU) ( KSF-A-12 and KSF-T-07). References [1] T. Hashizμme et al., Mater. Sci. Semicond. Process., vol. 78, pp.85–95(2018). [2] J. He et al., Adv. Electron. Mater., vol. 7, p.2001045, (2021). [3] Y. Cai et al., IEEE Access, vol. 8, pp. 95642–95649, (2020). [4] G. Dutta et al., IEEE Trans. Electron Devices, vol. 64, pp. 3609–3615(2017). [5] S. Turuvekere et al., IEEE Trans. Electron Devices, vol. 60, pp. 3157–3165(2013). [6] S. D. Gupta et al., IEEE Trans. Electron Devices, vol. 68, pp. 5720–5727(2021). [7] Z. Tang et al., IEEE Electron Device Lett., vol. 34, pp. 1373–1375(2013). [8] Z. Sun et al., IEEE Electron Device Lett., vol. 41, pp. 135– 138(2020). [9] B. Syamal et al., IPFA, pp. 1–4(2019). [10] Y. Liang et al., ICICDT, pp. 1–4(2021). [11] D. Jin et al., IEDM, p. 6.2.1-6.2.4(2013). [12] D. Bisi et al., IEEE Electron Device Lett., vol. 35, pp. 1004–1006(2014). [13] S. D. Gupta et al., IEEE Trans. Electron Devices, vol. 68, pp. 5728–5735(2021). [14] M. T. Hasan et al., IEEE Electron Device Lett., vol. 34, pp. 1379–1381(2013). [15] Z. Li et al., ICSICT, pp. 1–3(2014). [16] A. Guo et al. IEEE Trans. Electron Devices, vol. 64, pp. 2142–2147(2017). [17] M. Wang et al., IEEE Electron Device Lett., vol. 35, pp. 1094–1096(2014). [18] P.-C. Chou et al., Semicond. Sci. Technol., vol. 33, p. 055012(2018). [19] M. Meneghini et al., IEEE Trans. Power Electron., vol. 29, pp. 2199–2207(2014). Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 ; Conference date: 25-10-2022 Through 28-10-2022",
year = "2022",
doi = "10.1109/ICSICT55466.2022.9963385",
language = "English",
series = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",
}