@inproceedings{2e6c1555c3bd48369dcd4234982cbbce,
title = "Strain status in Fe- and Si- doped GaN epilayers grown on sapphire",
abstract = "The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.",
author = "Zheng, {C. C.} and Ning, {J. Q.} and Wang, {J. F.} and K. Xu and Zhao, {D. G.} and Xu, {S. J.}",
note = "Publisher Copyright: {\textcopyright} OSA 2015.; Optoelectronic Devices and Integration, OEDI 2015 ; Conference date: 16-06-2015 Through 19-06-2015",
year = "2015",
doi = "10.1364/OEDI.2015.JW3A.47",
language = "English",
isbn = "9781943580019",
series = "Optoelectronic Devices and Integration, OEDI 2015",
publisher = "Optical Society of America (OSA)",
booktitle = "Optoelectronic Devices and Integration, OEDI 2015",
}