Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric

T. S. Zhao; C. Zhao; C. Z. Zhao; W. Y. Xu; L. Yang; I. Z. Mitrovic; S. Hall; E. G. Lim; S. C. Yu

doi:10.1109/ICICDT.2019.8790915

Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric

T. S. Zhao, C. Zhao, C. Z. Zhao, W. Y. Xu, L. Yang, I. Z. Mitrovic, S. Hall, E. G. Lim, S. C. Yu

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (HO). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm²·V^-1·s^-1, a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 10⁶.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790915
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

AlO
TFT
ZnSnO
high-k
solution process

Access to Document

10.1109/ICICDT.2019.8790915

Cite this

Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., Hall, S., Lim, E. G., & Yu, S. C. (2019). Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790915 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790915

Zhao, T. S. ; Zhao, C. ; Zhao, C. Z. et al. / Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

@inproceedings{bc846033c5e547f6847a7499a9c34b8b,

title = "Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric",

abstract = "In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (HO). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm2·V-1·s-1, a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 106.",

keywords = "AlO, TFT, ZnSnO, high-k, solution process",

author = "Zhao, {T. S.} and C. Zhao and Zhao, {C. Z.} and Xu, {W. Y.} and L. Yang and Mitrovic, {I. Z.} and S. Hall and Lim, {E. G.} and Yu, {S. C.}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790915",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ, Hall, S, Lim, EG & Yu, SC 2019, Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790915, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790915

Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. / Zhao, T. S.; Zhao, C.; Zhao, C. Z. et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790915 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric

AU - Zhao, T. S.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Xu, W. Y.

AU - Yang, L.

AU - Mitrovic, I. Z.

AU - Hall, S.

AU - Lim, E. G.

AU - Yu, S. C.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (HO). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm2·V-1·s-1, a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 106.

AB - In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (HO). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm2·V-1·s-1, a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 106.

KW - AlO

KW - TFT

KW - ZnSnO

KW - high-k

KW - solution process

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U2 - 10.1109/ICICDT.2019.8790915

DO - 10.1109/ICICDT.2019.8790915

M3 - Conference Proceeding

AN - SCOPUS:85071475619

T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

Y2 - 17 June 2019 through 19 June 2019

ER -

Zhao TS, Zhao C, Zhao CZ, Xu WY, Yang L, Mitrovic IZ et al. Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790915. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790915

Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric

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