Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate

Tianshi Zhao, Chun Zhao, Yina Liu, Li Yang, Ivona Z. Mitrovic, Eng Gee Lim, Ce Zhou Zhao

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

The synaptic transistors with MXenes as floating gate and titania (TiO2) as tunneling layer are prepared by a low-cost facile solution process. The devices exhibit typical synaptic behaviors of potentiation and depression by the gate voltage pulses. Moreover, through neuromorphic computing simulation, the transistors in this work show excellent recognition rate in the modified national institute of standards and technology (MNIST) database after 12,000 training states.

Original languageEnglish
Title of host publication2021 International Conference on IC Design and Technology, ICICDT 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665449984
DOIs
Publication statusPublished - 2021
Event2021 International Conference on IC Design and Technology, ICICDT 2021 - Dresden, Germany
Duration: 15 Sept 202117 Sept 2021

Publication series

Name2021 International Conference on IC Design and Technology, ICICDT 2021

Conference

Conference2021 International Conference on IC Design and Technology, ICICDT 2021
Country/TerritoryGermany
CityDresden
Period15/09/2117/09/21

Keywords

  • MXenes
  • artificial synapses
  • floating-gate
  • solution process
  • transistors

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