Silicon wafer modification by laser interference

L. Zhao; Z. Wang; D. Wang; Z. Zhang; Y. Yu; Z. Weng; C. Maple; D. Li; Y. Yue

doi:10.1109/NEMS.2013.6559942

Silicon wafer modification by laser interference

L. Zhao, Z. Wang^*, D. Wang, Z. Zhang, Y. Yu, Z. Weng, C. Maple, D. Li, Y. Yue

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm², 780mJ/cm² and 1280mJ/cm². The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fiuence and number of pulses have to be properly selected for the fabrication of gratings using laser interference.

Original language	English
Title of host publication	8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013
Pages	1236-1239
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2013.6559942
Publication status	Published - 2013
Externally published	Yes
Event	8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013 - Suzhou, China Duration: 7 Apr 2013 → 10 Apr 2013

Publication series

Name	8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013

Conference

Conference	8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013
Country/Territory	China
City	Suzhou
Period	7/04/13 → 10/04/13

Keywords

Laser interference
lithography
silicon wafer modification

Access to Document

10.1109/NEMS.2013.6559942

Cite this

Zhao, L., Wang, Z., Wang, D., Zhang, Z., Yu, Y., Weng, Z., Maple, C., Li, D., & Yue, Y. (2013). Silicon wafer modification by laser interference. In 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013 (pp. 1236-1239). Article 6559942 (8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013). https://doi.org/10.1109/NEMS.2013.6559942

@inproceedings{774eadfd12964ac4a4e7e012c42eb75a,

title = "Silicon wafer modification by laser interference",

abstract = "This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm2, 780mJ/cm2 and 1280mJ/cm2. The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fiuence and number of pulses have to be properly selected for the fabrication of gratings using laser interference.",

keywords = "Laser interference, lithography, silicon wafer modification",

author = "L. Zhao and Z. Wang and D. Wang and Z. Zhang and Y. Yu and Z. Weng and C. Maple and D. Li and Y. Yue",

year = "2013",

doi = "10.1109/NEMS.2013.6559942",

language = "English",

isbn = "9781467363525",

series = "8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013",

pages = "1236--1239",

booktitle = "8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013",

note = "8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013 ; Conference date: 07-04-2013 Through 10-04-2013",

}

Zhao, L, Wang, Z, Wang, D, Zhang, Z, Yu, Y, Weng, Z, Maple, C, Li, D & Yue, Y 2013, Silicon wafer modification by laser interference. in 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013., 6559942, 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013, pp. 1236-1239, 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013, Suzhou, China, 7/04/13. https://doi.org/10.1109/NEMS.2013.6559942

Silicon wafer modification by laser interference. / Zhao, L.; Wang, Z.; Wang, D. et al.
8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013. 2013. p. 1236-1239 6559942 (8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Silicon wafer modification by laser interference

AU - Zhao, L.

AU - Wang, Z.

AU - Wang, D.

AU - Zhang, Z.

AU - Yu, Y.

AU - Weng, Z.

AU - Maple, C.

AU - Li, D.

AU - Yue, Y.

PY - 2013

Y1 - 2013

N2 - This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm2, 780mJ/cm2 and 1280mJ/cm2. The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fiuence and number of pulses have to be properly selected for the fabrication of gratings using laser interference.

AB - This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm2, 780mJ/cm2 and 1280mJ/cm2. The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fiuence and number of pulses have to be properly selected for the fabrication of gratings using laser interference.

KW - Laser interference

KW - lithography

KW - silicon wafer modification

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M3 - Conference Proceeding

AN - SCOPUS:84883111833

SN - 9781467363525

T3 - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013

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BT - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013

T2 - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013

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Zhao L, Wang Z, Wang D, Zhang Z, Yu Y, Weng Z et al. Silicon wafer modification by laser interference. In 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013. 2013. p. 1236-1239. 6559942. (8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013). doi: 10.1109/NEMS.2013.6559942

Silicon wafer modification by laser interference

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Keywords

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