TY - JOUR
T1 - Self-driven photodetection based on impedance matching effect between a triboelectric nanogenerator and a MoS 2 nanosheets photodetector
AU - Han, Lei
AU - Peng, Mingfa
AU - Wen, Zhen
AU - Liu, Yina
AU - Zhang, Yi
AU - Zhu, Qianqian
AU - Lei, Hao
AU - Liu, Sainan
AU - Zheng, Li
AU - Sun, Xuhui
AU - Li, Hexing
N1 - Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2019/5
Y1 - 2019/5
N2 - Constructing electronic systems without an external power source is urgently required toward self-powered photodetection. In this work, we proposed a self-driven photodetection system with a MoS 2 nanosheets photodetector as light intensity sensor, a vertical contact-separate mode triboelectric nanogenerator (CS-TENG) as power source, and several LEDs as alarm. The MoS 2 based planar photodetector was fabricated by conventional photolithography technique and lift-off process. It is highly sensitive for visible light illumination with high current on-off ratio and excellent reproducibility characteristics under light on-off switching. When conjuncting these functional devices, the induced output voltage of the CS-TENG is tuned by the load resistance of the photodetector, which is responded to the light intensity. The mechanism can be ascribed to the impedance matching effect between specific output characteristics of TENG and working status of photodetector. By adding a Zener diode acts as a voltage regulator, the self-driven renders the voltage and current varying from 1.58 to 20.60 V and 0.06–4.78 μA in a range of light intensity from 0 to 3.19 W/m 2 , respectively. Finally, it is demonstrated that the output of CS-TENG varies with the variable working states of the MoS 2 photodetector and then accurately reflects on the lighted number of LEDs.
AB - Constructing electronic systems without an external power source is urgently required toward self-powered photodetection. In this work, we proposed a self-driven photodetection system with a MoS 2 nanosheets photodetector as light intensity sensor, a vertical contact-separate mode triboelectric nanogenerator (CS-TENG) as power source, and several LEDs as alarm. The MoS 2 based planar photodetector was fabricated by conventional photolithography technique and lift-off process. It is highly sensitive for visible light illumination with high current on-off ratio and excellent reproducibility characteristics under light on-off switching. When conjuncting these functional devices, the induced output voltage of the CS-TENG is tuned by the load resistance of the photodetector, which is responded to the light intensity. The mechanism can be ascribed to the impedance matching effect between specific output characteristics of TENG and working status of photodetector. By adding a Zener diode acts as a voltage regulator, the self-driven renders the voltage and current varying from 1.58 to 20.60 V and 0.06–4.78 μA in a range of light intensity from 0 to 3.19 W/m 2 , respectively. Finally, it is demonstrated that the output of CS-TENG varies with the variable working states of the MoS 2 photodetector and then accurately reflects on the lighted number of LEDs.
KW - Impedance matching effect
KW - MoS nanosheets photodetector
KW - Photodetection
KW - Self-driven
KW - Triboelectric nanogenerator
UR - http://www.scopus.com/inward/record.url?scp=85062467578&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2019.02.072
DO - 10.1016/j.nanoen.2019.02.072
M3 - Article
AN - SCOPUS:85062467578
SN - 2211-2855
VL - 59
SP - 492
EP - 499
JO - Nano Energy
JF - Nano Energy
ER -