TY - JOUR
T1 - Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions
AU - Wang, Suyun
AU - Wang, Qinan
AU - Li, Min
AU - Fang, Yuxiao
AU - Shao, Shuangshuang
AU - Xie, Tanghao
AU - Zhao, Chun
AU - Liang, Lijuan
AU - Zhao, Jianwen
N1 - Funding Information:
S.Y. Wang and Q.N. Wang contributed equally to this work. This work was supported by the National Key Research and Development Program of China (2020YFA0714700), the National Natural Science Foundation of China (62274174), and the Cooperation Project of Vacuum Interconnect Research Facility (NANO-X) of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (F2208). The authors are grateful for the technical support for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO).
Funding Information:
S.Y. Wang and Q.N. Wang contributed equally to this work. This work was supported by the National Key Research and Development Program of China ( 2020YFA0714700 ), the National Natural Science Foundation of China ( 62274174 ), and the Cooperation Project of Vacuum Interconnect Research Facility ( NANO-X ) of Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (F2208). The authors are grateful for the technical support for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences ( SINANO ).
Publisher Copyright:
© 2023 Elsevier Ltd
PY - 2023/10
Y1 - 2023/10
N2 - The development of novel large-area flexible optoelectronic synaptic devices is of great interest for visual neuromorphic computing. In this paper, we have successfully manufactured 33 × 34 flexible carbon nanotube synaptic photogating transistor arrays via the roll-to-roll gravure printing technology using the mixture of photosensitive rhodamine 6G and poly(vinylidene fluoride-co-hexa-fluoropropylene) as the composite dielectric layer. The resulting thin-film transistor devices exhibit excellent electrical properties with high Ion/Ioff (>105), the maximum carrier mobility (10.71 cm2V−1s−1) and low operating voltage (−1.5 V∼ 0.5 V), and excellent optoelectronic synaptic properties, which are capable of performing not only the excitatory postsynaptic current and paired pulse facilitation but also complex biological synaptic functions such as optical writing and electrical erasure, dynamic learning and forgetting processes, and Pavlov's dog experiment. Significantly, the ultralow energy consumption per light spike event as low as 0.03 fJ can be achieved under the pulse UV light illumination. Moreover, according to the trend that the LTP/LTD curve conforms to the concave function, we successfully embed the specific update rules of our synaptic devices into the generative adversarial network (GAN) that can generate high-quality (7680 × 4096 pixels) images, which is impossible for the human eye to distinguish the difference between the original labels and real labels.
AB - The development of novel large-area flexible optoelectronic synaptic devices is of great interest for visual neuromorphic computing. In this paper, we have successfully manufactured 33 × 34 flexible carbon nanotube synaptic photogating transistor arrays via the roll-to-roll gravure printing technology using the mixture of photosensitive rhodamine 6G and poly(vinylidene fluoride-co-hexa-fluoropropylene) as the composite dielectric layer. The resulting thin-film transistor devices exhibit excellent electrical properties with high Ion/Ioff (>105), the maximum carrier mobility (10.71 cm2V−1s−1) and low operating voltage (−1.5 V∼ 0.5 V), and excellent optoelectronic synaptic properties, which are capable of performing not only the excitatory postsynaptic current and paired pulse facilitation but also complex biological synaptic functions such as optical writing and electrical erasure, dynamic learning and forgetting processes, and Pavlov's dog experiment. Significantly, the ultralow energy consumption per light spike event as low as 0.03 fJ can be achieved under the pulse UV light illumination. Moreover, according to the trend that the LTP/LTD curve conforms to the concave function, we successfully embed the specific update rules of our synaptic devices into the generative adversarial network (GAN) that can generate high-quality (7680 × 4096 pixels) images, which is impossible for the human eye to distinguish the difference between the original labels and real labels.
KW - Flexible optoelectronic synaptic devices
KW - Generative adversarial network (GAN)
KW - Large-area
KW - Low power consumption
KW - R2R
UR - http://www.scopus.com/inward/record.url?scp=85165106707&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2023.108698
DO - 10.1016/j.nanoen.2023.108698
M3 - Article
AN - SCOPUS:85165106707
SN - 2211-2855
VL - 115
JO - Nano Energy
JF - Nano Energy
M1 - 108698
ER -