Review of SiC Power Devices for Electrical Power Systems: Characteristics, Protection, and Application

Xue Wang, Huiqing Wen, Yinxiao Zhu

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

10 Citations (Scopus)

Abstract

Wide-bandgap devices such as Gallium-Nitride (GaN) power devices, Gallium-Arsenide (GaAs) power devices, and Silicon-Carbide (SiC) power devices have obvious advantages such as the switching speed, operation temperature, and power density compared with the counterpart Silicon devices. Among the wide-bandgap power devices mentioned above, the SiC power devices have their particular characteristics, such as high switching speed, lower switching loss, and excellent thermal performances. In this paper, a review is given for the SiC power devices in terms of the development and optimization, short circuit characteristics, and different protection methods according to their short circuit characteristics of the devices.

Original languageEnglish
Title of host publicationProceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021
EditorsTek-Tjing Lie, Youbo Liu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages531-536
Number of pages6
ISBN (Electronic)9781728191591
DOIs
Publication statusPublished - Apr 2021
Event6th Asia Conference on Power and Electrical Engineering, ACPEE 2021 - Chongqing, China
Duration: 8 Apr 202111 Apr 2021

Publication series

NameProceedings - 2021 6th Asia Conference on Power and Electrical Engineering, ACPEE 2021

Conference

Conference6th Asia Conference on Power and Electrical Engineering, ACPEE 2021
Country/TerritoryChina
CityChongqing
Period8/04/2111/04/21

Keywords

  • SiC power devices
  • protect circuit
  • short circuit characteristics

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