TY - JOUR
T1 - Review of Pulse Test Setup for the Switching Characterization of GaN Power Devices
AU - Zu, Guangze
AU - Wen, Huiqing
AU - Zhu, Yinxiao
AU - Zhong, Rui
AU - Bu, Qinglei
AU - Liu, Wen
AU - Zhao, Yinchao
AU - Cui, Miao
N1 - Funding Information:
This work was supported in part by the National Natural Science Foundation of China under Grant 52177195; in part by the Research Development Fund of Xi’an Jiaotong-Liverpool University (XJTLU) under Grant RDF-16-01 and Grant RDF-17-01-02; in part by the Research Enhancement fund of XJTLU under Grant REF-17-01-02; in part by the Suzhou Prospective Application Programme under Grant SYG202016; and in part by the XJTLU Key Programme Special Fund under Grant KSF-A-08, Grant KSF-E-13, and Grant KSF-T-04
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - Pulse test techniques are widely adopted in characterizing both the static and dynamic performances of semiconductor devices considering various device structures and operating conditions. For gallium nitride (GaN) devices, due to the current collapse phenomenon, fast and accurate measurement of their key electrical parameters, such as dynamic ON-state resistance ${R}_{\text {ds}, \mathrm{\scriptscriptstyle ON}}$ , switching rising time, fall time, switching losses, and short-circuit (SC) robustness, becomes essential. This article presents a comprehensive review of state-of-the-art pulse test setup methods such as the double-pulse test (DPT), multiple-pulse test (MPT), and SC test (SCT) for the first time, which facilitates the GaN device structure design and practical applications in high efficiency and power density power converters.
AB - Pulse test techniques are widely adopted in characterizing both the static and dynamic performances of semiconductor devices considering various device structures and operating conditions. For gallium nitride (GaN) devices, due to the current collapse phenomenon, fast and accurate measurement of their key electrical parameters, such as dynamic ON-state resistance ${R}_{\text {ds}, \mathrm{\scriptscriptstyle ON}}$ , switching rising time, fall time, switching losses, and short-circuit (SC) robustness, becomes essential. This article presents a comprehensive review of state-of-the-art pulse test setup methods such as the double-pulse test (DPT), multiple-pulse test (MPT), and SC test (SCT) for the first time, which facilitates the GaN device structure design and practical applications in high efficiency and power density power converters.
KW - Accumulated degradation
KW - clamping circuit
KW - dynamic ON-resistance
KW - pulse test
KW - short-circuit (SC) robustness
KW - switching performance
KW - Performance evaluation
KW - dynamic on-resistance
KW - Switches
KW - Clamps
KW - Gallium nitride
KW - Switching circuits
KW - Switching loss
KW - Transient analysis
UR - http://www.scopus.com/inward/record.url?scp=85129651367&partnerID=8YFLogxK
U2 - 10.1109/TED.2022.3168238
DO - 10.1109/TED.2022.3168238
M3 - Article
AN - SCOPUS:85129651367
SN - 0018-9383
VL - 69
SP - 3003
EP - 3013
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -