@inproceedings{927cc925908047caa0ed56aef00d0ab5,
title = "Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers",
abstract = "In this work, transparent Ag/GaOx/AlOx/ITO RRAM devices were fabricated with solution-based bilayer dielectric annealed at low temperature (250°C). All devices exhibited superior electrical performance such as low operation voltage in the SET process (0.3 V), narrow resistance distribution, high ON/OFF ratio (-104), long retention time (>104 s) and good endurance property (>100 cycles). The performance of bilayer-dielectric RRAM devices suggested the great potential of application in the flexible electronics industry.",
keywords = "bilayer dielectric, low annealing temperature, solution-based, transparent",
author = "Zongjie Shen and Chun Zhao and Mitrovic, {Ivona Z.} and Cezhou Zhao and Li Yang",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 ; Conference date: 01-09-2020 Through 30-09-2020",
year = "2020",
month = sep,
day = "1",
doi = "10.1109/EUROSOI-ULIS49407.2020.9365382",
language = "English",
series = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
}