TY - GEN
T1 - Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures
AU - Shen, Zongjie
AU - Zhao, Cezhou
AU - Yang, Li
AU - Zhao, Chun
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - Solution-processed AlOxthin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN as the top electrode (TE) to investigate the influence of metal electrode on device performances. In this work, RRAM devices with various performances exhibit typical bipolar resistive switching (RS) characteristics. The difference of work function between the TE and bottom electrode (BE) metals is considered to play a primary role in operation process. With smaller difference of work function, the devices indicate less power consumption and more stable on/off ratio for SET and RESET operations. The Ni/AlOx/Pt devices demonstrate more stable performance with lower SET and RESET operation voltages (<1.3 V), larger on/off ratio (>103), longer retention time (>104 s) and better endurance(>100 cycle).
AB - Solution-processed AlOxthin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN as the top electrode (TE) to investigate the influence of metal electrode on device performances. In this work, RRAM devices with various performances exhibit typical bipolar resistive switching (RS) characteristics. The difference of work function between the TE and bottom electrode (BE) metals is considered to play a primary role in operation process. With smaller difference of work function, the devices indicate less power consumption and more stable on/off ratio for SET and RESET operations. The Ni/AlOx/Pt devices demonstrate more stable performance with lower SET and RESET operation voltages (<1.3 V), larger on/off ratio (>103), longer retention time (>104 s) and better endurance(>100 cycle).
KW - RRAM
KW - Solution-processed
KW - Top electrode
UR - http://www.scopus.com/inward/record.url?scp=85082984731&partnerID=8YFLogxK
U2 - 10.1109/ISOCC47750.2019.9027657
DO - 10.1109/ISOCC47750.2019.9027657
M3 - Conference Proceeding
AN - SCOPUS:85082984731
T3 - Proceedings - 2019 International SoC Design Conference, ISOCC 2019
SP - 182
EP - 183
BT - Proceedings - 2019 International SoC Design Conference, ISOCC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th International System-on-Chip Design Conference, ISOCC 2019
Y2 - 6 October 2019 through 9 October 2019
ER -