Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Y. F. Qi; Z. J. Shen; Chun Zhao; I. Z. Mitrovic; W. Y. Xu; E. G. Lim; L. Yang; J. H. He; T. Luo; Y. B. Huang; Ce Zhou Zhao

doi:10.1016/j.sse.2019.107735

Resistive switching behavior of solution-processed AlO_x and GO based RRAM at low temperature

Y. F. Qi, Z. J. Shen, Chun Zhao^*, I. Z. Mitrovic, W. Y. Xu, E. G. Lim, L. Yang, J. H. He, T. Luo, Y. B. Huang, Ce Zhou Zhao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlO_x) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlO_x and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlO_x and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlO_x based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlO_x and GO films with lower energy consumption for non-volatile memory (NVM).

Original language	English
Article number	107735
Journal	Solid-State Electronics
Volume	168
DOIs	https://doi.org/10.1016/j.sse.2019.107735
Publication status	Published - Jun 2020

Keywords

Aluminum oxide
Graphene oxide
Resistive switching
Solution-processed

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10.1016/j.sse.2019.107735

Cite this

@article{9712b1e4da4847d6aa361c6d30a82c58,

title = "Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature",

abstract = "This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).",

keywords = "Aluminum oxide, Graphene oxide, Resistive switching, Solution-processed",

author = "Qi, {Y. F.} and Shen, {Z. J.} and Chun Zhao and Mitrovic, {I. Z.} and Xu, {W. Y.} and Lim, {E. G.} and L. Yang and He, {J. H.} and T. Luo and Huang, {Y. B.} and Zhao, {Ce Zhou}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2020",

month = jun,

doi = "10.1016/j.sse.2019.107735",

language = "English",

volume = "168",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

AU - Qi, Y. F.

AU - Shen, Z. J.

AU - Zhao, Chun

AU - Mitrovic, I. Z.

AU - Xu, W. Y.

AU - Lim, E. G.

AU - Yang, L.

AU - He, J. H.

AU - Luo, T.

AU - Huang, Y. B.

AU - Zhao, Ce Zhou

PY - 2020/6

Y1 - 2020/6

N2 - This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).

AB - This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide (AlOx) and graphene oxide (GO) dielectric films, which were solution-processed under low annealing temperatures of 250 °C and 50 °C for AlOx and GO dielectric films, respectively. As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property. A smaller operation voltage and better stability were demonstrated in AlOx based RRAM devices while higher resistance magnitude of high resistance state (HRS) and resistance ratio were observed in GO based RRAM devices. The current study opens up promising applications of environmental-friendly solution-processed AlOx and GO films with lower energy consumption for non-volatile memory (NVM).

KW - Aluminum oxide

KW - Graphene oxide

KW - Resistive switching

KW - Solution-processed

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