TY - JOUR
T1 - Research on the electronic structure of the interface between the LiNbO3 and the magic angle graphene electrode
T2 - first principle calculation
AU - Liu, Yue
AU - Li, Huachao
AU - Li, Yanshuai
AU - Shang, Wenlong
AU - Ye, Kun
AU - Hou, Wenjing
N1 - Publisher Copyright:
© 2023 Taylor & Francis Group, LLC.
PY - 2023
Y1 - 2023
N2 - In this paper, the interfacial electronic structures of the monolayer, bilayer, and magic-angle graphene/LiNbO3 heterostructures are calculated. The density, energy band, differential charge density, effective mass are calculated and analyzed for the model of structure. The results show that the interface material can adjust the state density, band width, electron concentration and effective mass of the electrons around the Fermi energy level. Therefore, we predict that this structure is feasible in principle for experimental preparation, and can improve the transfer efficiency of carrier, which can provide a high-speed carrier basis for the solar cells.
AB - In this paper, the interfacial electronic structures of the monolayer, bilayer, and magic-angle graphene/LiNbO3 heterostructures are calculated. The density, energy band, differential charge density, effective mass are calculated and analyzed for the model of structure. The results show that the interface material can adjust the state density, band width, electron concentration and effective mass of the electrons around the Fermi energy level. Therefore, we predict that this structure is feasible in principle for experimental preparation, and can improve the transfer efficiency of carrier, which can provide a high-speed carrier basis for the solar cells.
KW - effective mass
KW - ferroelectric photovoltaic
KW - First principles
KW - heterostructure
KW - magic angle graphene
UR - http://www.scopus.com/inward/record.url?scp=85169296731&partnerID=8YFLogxK
U2 - 10.1080/00150193.2021.1984774
DO - 10.1080/00150193.2021.1984774
M3 - Article
AN - SCOPUS:85169296731
SN - 0015-0193
VL - 614
SP - 160
EP - 171
JO - Ferroelectrics
JF - Ferroelectrics
IS - 1
ER -