@inproceedings{683813cb97b444a2a2f8f753da2d0fb4,
title = "Radiation tolerant DC characteristics of InAs/GaAs quantum-dot diodes",
abstract = "Effects of 137Cs gamma irradiation on the DC electrical characteristics of InAs/GaAs quantum dots (QDs) mesa diodes are reported. The devices were irradiated with gamma-rays for different doses ranging from 100 rad to about 1 Mrad (GaAs). The QDs mesa diodes are found to be tolerant to γ radiation. No enhanced leakage current and shift in the turn-on voltage were observed in the InAs/GaAs QD devices after exposure to γ-radiation. When irradiated by γ-rays continuously, there seemed to be a small degradation trend in the forward-bias current after irradiating the mesa diode for about six hours.",
keywords = "InAs/GaAs, gamma irradiation, radiation effects, semiconductor quantum dots",
author = "Yifei Mu and Sang Lam and Cezhou Zhao and N. Babazadeh and Hogg, {Richard A.} and K. Nishi and K. Takemasa and M. Sugawara",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",
year = "2015",
month = sep,
day = "30",
doi = "10.1109/EDSSC.2015.7285062",
language = "English",
series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "110--113",
booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
}