@inproceedings{900d992e26084a36a40a1cafc6c70925,
title = "Plasma-Enhanced Combustion-Processed Al Gate Oxide for in Thin Film Transistors",
abstract = "In this study, we describe how to obtain high-quality Al dielectric thin films and their implementation in In thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al. The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×104, and a superior mobility of 136 cm2 V-1 s-1.",
keywords = "Low-temperature, Solution-processed, combustion synthesis, environmentally friendly, metal oxide thin-film transistors",
author = "Liu, {Q. H.} and C. Zhao and Zhao, {C. Z.} and Mitrovic, {I. Z.} and S. Hall and Xu, {W. Y.} and L. Yang and Lim, {E. G.} and Wang, {Q. N.} and Wei, {Y. L.} and Cao, {Y. X.}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",
year = "2019",
month = jun,
doi = "10.1109/ICICDT.2019.8790939",
language = "English",
series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
}