@inproceedings{d89045f0ddb84bc18a8d1516ee817301,
title = "Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor",
abstract = "This work presents an analysis of the high-frequency behavior of Ga2O3 hot-electron transistors (HETs). We propose a small-signal model for Ga2O3 HET for the first time. The developed equivalent circuit can be easily integrated into the SPICE program providing a fast simulation result compared to the numerical simulation. The proposed equivalent circuit includes capacitances, current source, RC-delay circuit, and resistances to capture the intrinsic behavior of the transistor. The proposed circuit model is implemented in Advanced Design System (ADS), and the S-parameters are simulated over a wide frequency range. The results show that a positive power gain is realized as the collector current density increases. The cut-off frequency is also found to increase with the current density. The analysis provides valuable insights into the performance of Ga2O3 HET s and their potential for high-frequency applications.",
keywords = "cut-off frequency, Ga2O3 HETs, S-parameters, small-signal model",
author = "Roupu Zhu and Chengwei Liu and Yuhao Zhu and Wen Liu and Yi Pei and Wong, {Man Hoi}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on IC Design and Technology, ICICDT 2023 ; Conference date: 25-09-2023 Through 27-09-2023",
year = "2023",
doi = "10.1109/ICICDT59917.2023.10332310",
language = "English",
series = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "156--158",
editor = "Duy-Hieu Bui",
booktitle = "Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023",
}