Photoluminescence and Raman mapping characterization of WS2 monolayers prepared using top-down and bottom-up methods

X. H. Wang; J. Q. Ning; C. C. Zheng; B. R. Zhu; L. Xie; H. S. Wu; S. J. Xu

doi:10.1039/c5tc00016e

Photoluminescence and Raman mapping characterization of WS₂ monolayers prepared using top-down and bottom-up methods

X. H. Wang, J. Q. Ning, C. C. Zheng, B. R. Zhu, L. Xie, H. S. Wu, S. J. Xu^*

^*Corresponding author for this work

School of Mathematics and Physics

The University of Hong Kong

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Two kinds of tungsten disulfide (WS₂) monolayers, respectively prepared using top-down and bottom-up approaches, were studied with Raman and photoluminescence (PL) mapping techniques. By mapping the intensities of the two characterized phonon modes of WS₂, the monolayer region can be quickly selected. Such selection by mapping the intensities is more conclusive than by comparing the small shift in phonon peak position. Also, PL mapping yields more information regarding the uniformity and quality of the monolayers than does Raman mapping. We also show that the focused laser may cause substantial damage to the crystal lattice of monolayers for long-duration mappings.

Original language	English
Pages (from-to)	2589-2592
Number of pages	4
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	11
DOIs	https://doi.org/10.1039/c5tc00016e
Publication status	Published - Mar 2015

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title = "Photoluminescence and Raman mapping characterization of WS2 monolayers prepared using top-down and bottom-up methods",

abstract = "Two kinds of tungsten disulfide (WS2) monolayers, respectively prepared using top-down and bottom-up approaches, were studied with Raman and photoluminescence (PL) mapping techniques. By mapping the intensities of the two characterized phonon modes of WS2, the monolayer region can be quickly selected. Such selection by mapping the intensities is more conclusive than by comparing the small shift in phonon peak position. Also, PL mapping yields more information regarding the uniformity and quality of the monolayers than does Raman mapping. We also show that the focused laser may cause substantial damage to the crystal lattice of monolayers for long-duration mappings.",

author = "Wang, {X. H.} and Ning, {J. Q.} and Zheng, {C. C.} and Zhu, {B. R.} and L. Xie and Wu, {H. S.} and Xu, {S. J.}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2015.",

year = "2015",

month = mar,

doi = "10.1039/c5tc00016e",

language = "English",

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pages = "2589--2592",

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TY - JOUR

T1 - Photoluminescence and Raman mapping characterization of WS2 monolayers prepared using top-down and bottom-up methods

AU - Wang, X. H.

AU - Ning, J. Q.

AU - Zheng, C. C.

AU - Zhu, B. R.

AU - Xie, L.

AU - Wu, H. S.

AU - Xu, S. J.

PY - 2015/3

Y1 - 2015/3

N2 - Two kinds of tungsten disulfide (WS2) monolayers, respectively prepared using top-down and bottom-up approaches, were studied with Raman and photoluminescence (PL) mapping techniques. By mapping the intensities of the two characterized phonon modes of WS2, the monolayer region can be quickly selected. Such selection by mapping the intensities is more conclusive than by comparing the small shift in phonon peak position. Also, PL mapping yields more information regarding the uniformity and quality of the monolayers than does Raman mapping. We also show that the focused laser may cause substantial damage to the crystal lattice of monolayers for long-duration mappings.

AB - Two kinds of tungsten disulfide (WS2) monolayers, respectively prepared using top-down and bottom-up approaches, were studied with Raman and photoluminescence (PL) mapping techniques. By mapping the intensities of the two characterized phonon modes of WS2, the monolayer region can be quickly selected. Such selection by mapping the intensities is more conclusive than by comparing the small shift in phonon peak position. Also, PL mapping yields more information regarding the uniformity and quality of the monolayers than does Raman mapping. We also show that the focused laser may cause substantial damage to the crystal lattice of monolayers for long-duration mappings.

UR - http://www.scopus.com/inward/record.url?scp=84924330392&partnerID=8YFLogxK

U2 - 10.1039/c5tc00016e

DO - 10.1039/c5tc00016e

M3 - Article

AN - SCOPUS:84924330392

SN - 2050-7534

VL - 3

SP - 2589

EP - 2592

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 11

ER -

Photoluminescence and Raman mapping characterization of WS₂ monolayers prepared using top-down and bottom-up methods

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