Orientationally ordered island growth of higher fullerenes on Ag/Si(111)-(√3 ×√3)R30°

M. J. Butcher; J. W. Nolan; M. R.C. Hunt; P. H. Beton; L. Dunsch; P. Kuran; P. Georgi; T. J.S. Dennis

Orientationally ordered island growth of higher fullerenes on Ag/Si(111)-(√3 ×√3)R30°

M. J. Butcher^*, J. W. Nolan, M. R.C. Hunt, P. H. Beton, L. Dunsch, P. Kuran, P. Georgi, T. J.S. Dennis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The adsorption of the higher endohedral and empty fullerenes La@C₈₂ and C₈₄ on Ag/Si(111)-(√3 × √3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.

Original language	English
Article number	195401
Pages (from-to)	1954011-1954016
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	19
Publication status	Published - 15 Nov 2001
Externally published	Yes

Cite this

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title = "Orientationally ordered island growth of higher fullerenes on Ag/Si(111)-(√3 ×√3)R30°",

abstract = "The adsorption of the higher endohedral and empty fullerenes La@C82 and C84 on Ag/Si(111)-(√3 × √3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.",

author = "Butcher, {M. J.} and Nolan, {J. W.} and Hunt, {M. R.C.} and Beton, {P. H.} and L. Dunsch and P. Kuran and P. Georgi and Dennis, {T. J.S.}",

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AU - Butcher, M. J.

AU - Nolan, J. W.

AU - Hunt, M. R.C.

AU - Beton, P. H.

AU - Dunsch, L.

AU - Kuran, P.

AU - Georgi, P.

AU - Dennis, T. J.S.

PY - 2001/11/15

Y1 - 2001/11/15

N2 - The adsorption of the higher endohedral and empty fullerenes La@C82 and C84 on Ag/Si(111)-(√3 × √3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.

AB - The adsorption of the higher endohedral and empty fullerenes La@C82 and C84 on Ag/Si(111)-(√3 × √3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.

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AN - SCOPUS:0035891041

SN - 1098-0121

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JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 195401

ER -

Orientationally ordered island growth of higher fullerenes on Ag/Si(111)-(√3 ×√3)R30°

Abstract

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