Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In2O3 Thin-Film Transistors

Tao Song; Tianshi Zhao; Yuxiao Fang; Chun Zhao; Cezhou Zhao; Sang Lam

doi:10.1109/EDTM.2019.8731133

Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors

Tao Song, Tianshi Zhao, Yuxiao Fang, Chun Zhao, Cezhou Zhao^*, Sang Lam

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

N-channel thin-film transistors (TFTs) made of solution-processed In₂O₃ were fabricated and electrical tested for device reliability. While the TFTs give a threshold voltage V_th of 0.6 V for low-voltage operation, experimental results show that V_th shifts over time even when the gate biasing voltage is at 3 V. V_th can increase to about 2 V after about one hour. The change in V_th is nearly reversible if there is a long enough relaxation time. When the gate biasing voltage is -3 V, V_th changes from 0.6 V to -0.6 V and the V_th shift is less reversible. Such phenomena are expected to be due to the interface traps in the solution-processed In₂O₃.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	333-335
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731133
Publication status	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

bias stress effect
indium-oxide TFT
solution-processed InO TFT
threshold voltage shift

Access to Document

10.1109/EDTM.2019.8731133

Cite this

Song, T., Zhao, T., Fang, Y., Zhao, C., Zhao, C., & Lam, S. (2019). Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 333-335). Article 8731133 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731133

Song, Tao ; Zhao, Tianshi ; Fang, Yuxiao et al. / Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 333-335 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

@inproceedings{cf68343924b845a08e9b89f49071f4f1,

title = "Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In2O3 Thin-Film Transistors",

abstract = "N-channel thin-film transistors (TFTs) made of solution-processed In2O3 were fabricated and electrical tested for device reliability. While the TFTs give a threshold voltage Vth of 0.6 V for low-voltage operation, experimental results show that Vth shifts over time even when the gate biasing voltage is at 3 V. Vth can increase to about 2 V after about one hour. The change in Vth is nearly reversible if there is a long enough relaxation time. When the gate biasing voltage is -3 V, Vth changes from 0.6 V to -0.6 V and the Vth shift is less reversible. Such phenomena are expected to be due to the interface traps in the solution-processed In2O3.",

keywords = "bias stress effect, indium-oxide TFT, solution-processed InO TFT, threshold voltage shift",

author = "Tao Song and Tianshi Zhao and Yuxiao Fang and Chun Zhao and Cezhou Zhao and Sang Lam",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731133",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "333--335",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

}

Song, T, Zhao, T, Fang, Y , Zhao, C, Zhao, C & Lam, S 2019, Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731133, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 333-335, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731133

Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors. / Song, Tao; Zhao, Tianshi; Fang, Yuxiao et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 333-335 8731133 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In2O3 Thin-Film Transistors

AU - Song, Tao

AU - Zhao, Tianshi

AU - Fang, Yuxiao

AU - Zhao, Chun

AU - Zhao, Cezhou

AU - Lam, Sang

PY - 2019/3

Y1 - 2019/3

N2 - N-channel thin-film transistors (TFTs) made of solution-processed In2O3 were fabricated and electrical tested for device reliability. While the TFTs give a threshold voltage Vth of 0.6 V for low-voltage operation, experimental results show that Vth shifts over time even when the gate biasing voltage is at 3 V. Vth can increase to about 2 V after about one hour. The change in Vth is nearly reversible if there is a long enough relaxation time. When the gate biasing voltage is -3 V, Vth changes from 0.6 V to -0.6 V and the Vth shift is less reversible. Such phenomena are expected to be due to the interface traps in the solution-processed In2O3.

AB - N-channel thin-film transistors (TFTs) made of solution-processed In2O3 were fabricated and electrical tested for device reliability. While the TFTs give a threshold voltage Vth of 0.6 V for low-voltage operation, experimental results show that Vth shifts over time even when the gate biasing voltage is at 3 V. Vth can increase to about 2 V after about one hour. The change in Vth is nearly reversible if there is a long enough relaxation time. When the gate biasing voltage is -3 V, Vth changes from 0.6 V to -0.6 V and the Vth shift is less reversible. Such phenomena are expected to be due to the interface traps in the solution-processed In2O3.

KW - bias stress effect

KW - indium-oxide TFT

KW - solution-processed InO TFT

KW - threshold voltage shift

UR - http://www.scopus.com/inward/record.url?scp=85067833559&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731133

DO - 10.1109/EDTM.2019.8731133

M3 - Conference Proceeding

AN - SCOPUS:85067833559

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 333

EP - 335

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Song T, Zhao T, Fang Y , Zhao C, Zhao C, Lam S. Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In₂O₃ Thin-Film Transistors. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 333-335. 8731133. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731133