Nature of red luminescence band in research-grade ZnO single crystals: A "self-activated" configurational transition

Y. N. Chen; S. J. Xu; C. C. Zheng; J. Q. Ning; F. C.C. Ling; W. Anwand; G. Brauer; W. Skorupa

doi:10.1063/1.4892356

Nature of red luminescence band in research-grade ZnO single crystals: A "self-activated" configurational transition

Y. N. Chen, S. J. Xu^*, C. C. Zheng, J. Q. Ning, F. C.C. Ling, W. Anwand, G. Brauer, W. Skorupa

^*Corresponding author for this work

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

By implanting Zn⁺ ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zn_i) and O vacancies (V_O) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼ 2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low "kick out" thermal energy and small thermal quenching energy. A " self-activated" optical transition between a shallow donor and the defect center of Zn_i-V_O complex or V_ZnV_O di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

Original language	English
Article number	041912
Journal	Applied Physics Letters
Volume	105
Issue number	4
DOIs	https://doi.org/10.1063/1.4892356
Publication status	Published - 28 Jul 2014

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@article{4dd6cdbf84b94b26b8ca99b438a58866,

title = "Nature of red luminescence band in research-grade ZnO single crystals: A {"}self-activated{"} configurational transition",

abstract = "By implanting Zn+ ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zni) and O vacancies (VO) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼ 2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low {"}kick out{"} thermal energy and small thermal quenching energy. A {"} self-activated{"} optical transition between a shallow donor and the defect center of Zni-VO complex or VZnVO di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.",

author = "Chen, {Y. N.} and Xu, {S. J.} and Zheng, {C. C.} and Ning, {J. Q.} and Ling, {F. C.C.} and W. Anwand and G. Brauer and W. Skorupa",

year = "2014",

month = jul,

day = "28",

doi = "10.1063/1.4892356",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

}

TY - JOUR

T1 - Nature of red luminescence band in research-grade ZnO single crystals

T2 - A "self-activated" configurational transition

AU - Chen, Y. N.

AU - Xu, S. J.

AU - Zheng, C. C.

AU - Ning, J. Q.

AU - Ling, F. C.C.

AU - Anwand, W.

AU - Brauer, G.

AU - Skorupa, W.

PY - 2014/7/28

Y1 - 2014/7/28

N2 - By implanting Zn+ ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zni) and O vacancies (VO) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼ 2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low "kick out" thermal energy and small thermal quenching energy. A " self-activated" optical transition between a shallow donor and the defect center of Zni-VO complex or VZnVO di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

AB - By implanting Zn+ ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zni) and O vacancies (VO) which is revealed by precise X-Ray diffraction rocking curves, we observe an apparent broad red luminescence band with a nearly perfect Gaussian lineshape. This red luminescence band has the zero phonon line at ∼ 2.4 eV and shows distinctive lattice temperature dependence which is well interpreted with the configurational coordinate model. It also shows a low "kick out" thermal energy and small thermal quenching energy. A " self-activated" optical transition between a shallow donor and the defect center of Zni-VO complex or VZnVO di-vacancies is proposed to be responsible for the red luminescence band. Accompanied with the optical transition, large lattice relaxation simultaneously occurs around the center, as indicated by the generation of multiphonons.

UR - http://www.scopus.com/inward/record.url?scp=84905453318&partnerID=8YFLogxK

U2 - 10.1063/1.4892356

DO - 10.1063/1.4892356

M3 - Article

AN - SCOPUS:84905453318

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041912

ER -

Nature of red luminescence band in research-grade ZnO single crystals: A "self-activated" configurational transition

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